Photo-Induced ESR in Amorphous Si_<1-x>N_x:H Films
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概要
- 論文の詳細を見る
A large increase in the spin density for ESR signals originating from Si dangling bonds is observed by illumination at liquid nitrogen temperature for a-Si_<1-x>N_x:H films prepared by magnetron-sputtering and glow-discharge-decomposition. The photo-induced ESR can be explained as arising from the following three types of centers; (1) negative U centers which have unpaired spins metastable only under illumination, (2) positive U centers which are converted from negative U centers by illumination and (3) dangling bonds created by a bond-breaking by the intense illumination.
- 社団法人応用物理学会の論文
- 1984-07-20
著者
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SHIMIZU Tatsuo
Department of Electrical and Computer Engineering, Faculty of Engineering, Kanazawa University
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Kumeda M
Kanazawa Univ. Kanazawa Jpn
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Kumeda Minoru
Department Of Electrical And Computer Engineering Faculty Of Engineering Kanazawa University
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Shimizu T
Chiba Univ. Chiba Jpn
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Yokomichi H
Toyama Prefectural Univ.
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Yokomichi Haruo
Department Of Electronics And Informatics Toyama Prefectural University
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