ESR Studies on the Light-Induced Effect in Si-Based Amorphous Semiconductors
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概要
- 論文の詳細を見る
Light-induced creation of defects and their decay by annealing are investigated by means of ESR in a-Si:H, a-Si_<1-x>N_x:H and a-Si_<1-x>C_x:H. The amount of increase in the ESR spin density by prolonged strong illumination is found to increase with an increase in the structural flexibility factor defined by the inverse of the average coordination number, regarding an H atom bonded to Si, C or N as an entity reducing the coordination number by one.
- 社団法人応用物理学会の論文
- 1985-08-20
著者
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MORIMOTO Akiharu
Department of Electrical and Computer Engineering, Faculty of Engineering, Kanazawa University
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SHIMIZU Tatsuo
Department of Electrical and Computer Engineering, Faculty of Engineering, Kanazawa University
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KUMEDA Minoru
Department of Electronics, Faculty of Technology, Kanazawa University
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森本 朗裕
立命館大学 理工学部電子光情報工学科
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Kumeda Minoru
Department Of Electrical And Computer Engineering Faculty Of Engineering Kanazawa University
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YOKOMICHI Haruo
Department of Electronics and Informatics, Toyama Prefectural University
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Yokomichi Haruo
Department Of Electronics And Informatics Toyama Prefectural University
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Shimizu Tatsuo
Department Of Applied Physics University Of Tokyo
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Yokomichi Haruo
Department of Electronics, Faculty of Technology, Kanazawa University
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Morimoto Akiharu
Department of Electrical and Computer Engineering, Faculty of Engineering,
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Kumeda Minoru
Department of Electric and Electronic Engineering. Kanazawa University
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