Comparison between ESR and CPM for the Gap States in a-Si-Ge:H

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1991-06-15

著者

• Yan H

  Chinese Acad. Sci. Shanghai Chn

• Yan Hui

  Department Of Pediatrics Peking University First Hospital

• MORIMOTO Akiharu

  Department of Electrical and Computer Engineering, Faculty of Engineering, Kanazawa University

• SHIMIZU Tatsuo

  Department of Electrical and Computer Engineering, Faculty of Engineering, Kanazawa University

• KUMEDA Minoru

  Department of Electronics, Faculty of Technology, Kanazawa University

• Awaki Narimasa

  Department of Electronics, Faculty of Technology, Kanazawa University

• Watanabe Takeshi

  Central Research Laboratory, Hitachi,Ltd.

• Yan Hui

  Department Of Electronics Faculty Of Technology Kanazawa University

• Kumeda M

  Kanazawa Univ. Kanazawa Jpn

• Kumeda Minoru

  Department Of Electrical And Computer Engineering Faculty Of Engineering Kanazawa University

• Yan Haixue

  Shanghai Institute Of Ceramics Chinese Academy Of Sciences

• Shimizu T

  Chiba Univ. Chiba Jpn

• Awaki Narimasa

  Department Of Electronics Faculty Of Technology Kanazawa University

• Moto Akihiro

  The Authors Are With The Research Center For Superconductor Photonics Osaka University

• Shimizu Tatsuo

  Department Of Applied Physics University Of Tokyo

• Watanabe Takeshi

  Central Research Laboratory Hitachi Ltd.

• Morimoto Akiharu

  Department of Electrical and Computer Engineering, Faculty of Engineering,

• Kumeda Minoru

  Department of Electric and Electronic Engineering. Kanazawa University

• KUMEDA Minoru

  Department of Electronics Faculty of Technology, Kanazawa University

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