Light Soaking of a-Si:H at 77 K
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概要
- 論文の詳細を見る
Light-induced metastable changes in the defect density and the photoconductivity in hydrogenated amorphous silicon for light soaking at 77 K are compared with those at room temperature (RT). Using the power law and the stretched exponential law to fit the data, we found that data for the 77 K light soaking deviate from the (time)^<1/3>×(carrier generation rate)^<2/3> law for the RT light soaking, and the stretched exponential exponent β is around 0.7 in contrast to the value of about 0.45 for the RT light soaking.
- 社団法人応用物理学会の論文
- 1993-03-15
著者
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SHIMIZU Tatsuo
Department of Electrical and Computer Engineering, Faculty of Engineering, Kanazawa University
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KUMEDA Minoru
Department of Electronics, Faculty of Technology, Kanazawa University
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ZHANG Qing
Department of Nephrology, Yan Tai Yu Huang Ding Hospital, Qing Dao University School of Medicine
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Kumeda M
Kanazawa Univ. Kanazawa Jpn
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Kumeda Minoru
Department Of Electrical And Computer Engineering Faculty Of Engineering Kanazawa University
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Shimizu T
Chiba Univ. Chiba Jpn
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Zhang Q
Zhongshan Univ. Guangzhou Chn
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Zhang Qing
Department Of Biochemistry Ii Nagoya University Graduate School Of Medicine
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Shimizu Tatsuo
Department Of Applied Physics University Of Tokyo
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Zhang Qing
Department Of Applied Chemistry Saga University
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Kumeda Minoru
Department of Electric and Electronic Engineering. Kanazawa University
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KUMEDA Minoru
Department of Electronics Faculty of Technology, Kanazawa University
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