Nuclear Spin-Spin Coupling between Protons in Vinyl Derivatives
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人日本物理学会の論文
- 1959-05-05
著者
-
HATTORI Shuzo
Department of Electrical and Computer Engineering, Nagoya Institute of Technology
-
SHIMIZU Tatsuo
Department of Electrical and Computer Engineering, Faculty of Engineering, Kanazawa University
-
Hattori Shuzo
Department Of Physics Kanazawa University
-
SENDA Kantaro
Department of Physics, Kanazawa University
-
Senda Kantaro
Department Of Physics Kanazawa University
-
Matsuoka Shin-ichi
Department Of Physics Kanazawa University
-
Matsuoka Shin-ichi
Department Of Mechanical System Engineering Toyama Prefectural University
-
Shimizu Tatsuo
Department Of Applied Physics University Of Tokyo
-
Shimizu Tatsuo
Department Of Physics Kanazawa University
-
Matsuoka Shin-ichi
Department of Materials Science and Engineering, Nagoya Institute of Technology
関連論文
- Emission Properties of Electrodeless Argon Gas Discharge in VUV Region
- Vacuum Ultraviolet Light Source Using Electrodeless Discharge
- Vacuum Ultraviolet Detector
- Influence of Buffer Layers on Lead Magnesium Niobate Titanate Thin Films Prepared by Pulsed Laser Ablation
- Effect of Oxygen Pressure on (Ba_xSr_)TiO_3 Thin Films by Pulsed Laser Ablation
- Fast and Slow Processes in Light-Induced Electron Spin Resonance in Hydrogenated Amorphous Si-N Films
- Proton Nuclear Magnetic Resonance Studies on Structural Changes Induced by Annealing of Hydrogenated Amorphous Silicon Films Prepared at High Deposition-Rate
- Mossbauer Time Spectra of the Nuclear Forward Scattering from Coherently Vibrating Resonant Nuclei
- Reduction of Interface Defect Density by Hydrogen Dilution in a-Si:H/ZnS Multilayer Films
- InGaAsP/InP Wavelength Division Solar Cells : II-3: NEW STRUCTURE AND ADVANCED MATERIAL SOLAR CELLS
- Selective MOCVD Growth of GaAs on Si Substrate with Superlattice Intermediate Layers
- Deep Levels in GaAs Grown Using Superlattice Intermediate Layers on Si Substrates by MOCVD
- Mechnism of MOCVD Growth for GaAs and AlAs
- Solid Composition and Growth Rate of Ga_Al_xAs Grown Epitaxially by MOCVD
- Ellipsometric Studies on Sputter-Damaged Layer in n-InP
- Improved Performance of Discharge-Pumped XeCl Laser Using Ar/He Diluent
- Identification of a New Defect in Silicon Nitride Films
- Thermal Equilibration of Defect Density in Hydrogenated Amorphous Silicon-Germanium Alloys
- Comparison between ESR and CPM for the Gap States in a-Si-Ge:H
- Temperature Simulation of Cooling Process of Ge Droplets in Laser Droplet Epitaxy(Surfaces, Interfaces, and Films)
- Preparation of Twin- and Crack-Free LiNbO_3 Films by Pulsed Laser Ablation Using Nucleation Process at High Temperature : Surfaces, Interfaces, and Films
- Rotational Honeycomb Epitaxy of Ru Thin Films on Sapphire (0001) Substrate : Surfaces, Interfaces, and Films
- Preparation of Pb(Zn_Ti_)O_3 Films by Laser Ablation
- Thermal Analysis of Target Surface in the Ba-Y-Cu-O Film Preparation by Laser Ablation Method
- Preparation of Ba-Y-Cu-O Superconducting Films by Laser Ablation with and without Laser Irradiation on Growing Surface : Special Section : Solid State Devices and Materials 2 : Thin Film Devices and Superconductors
- a-Si_O_x:H Films Prepared by Direct Photo-CVD Using CO_2 Gas : Condensed Matter
- Preparation of Ba_2YCu_3O_x Superconducting Films by Laser Evaporation and Rapid Laser Annealing : Electrical Properties of Condensed Matter
- Mechanism of Stoichiometric Deposition of Volatile Elements in Multimetal-Oxide Films Prepared by Pulsed Laser Ablation
- Annealing Temperature Dependence of MgO Substrates on the Quality of YBa_2Cu_3O_x Films Prepared by Pulsed Laser Ablation
- Stress and Strain of GaAs on Si Grown by MOCVD Using Strained Superlattice Intermediate Layers and a Two-Step Growth Method
- Influence of Sub-Gap Illumination on Light-Induced ESR in Undoped a-Si:H
- Fine Structures of Proton Resonance Spectra of Fluorobenzene Derivatives
- Temperature-Independent Photoluminescence in Amorphous Si_C_x:(F,H) Films with Low Defect Density
- Glow Discharge a-Si_C_x: H Films Studied by ESR and IR Measurements
- ESR and IR Studies on a-Si_Ge_x: H Prepared by Glow Discharge Decomposition
- Properties of Hydrogenated Amorphous Si-N Prepared by Various Methods
- Thin Film Patterning by Laser Lift-Off
- Comparative Study of Defect Densities Evaluated by Electron Spin Resonance and Constant Photocurrent Method in Undoped and N-Doped Hydrogenated Amorphous Silicon
- Electron-Beam-Induced Nucleation Centers and Selective Deposition of Thin Zinc Films
- Photocreated Defects in Very Thin Hydrogenated Amorphous Silicon Films : Semiconductors
- Partial Recovery of Photodegradation at Room Temperature in Hydrogenated Amorphous Silicon
- Relation between Electron-Spin-Resonance and Constant-Photocurrent-Method Defect Densities in Hydrogenated Amorphous Silicon
- Preparation of Epitaxial Ge Film on Si by Pulsed Laser Ablation Using Molten Droplets
- Change of Spin-Lattice Relaxation Time with Light Soaking for Defects in Hydrogenated Amorphous Silicon
- Removal of Surface Oxides on Copper by Pulsed Laser lrradiation
- Relation between ESR and Hydrogen in Magnetron-Sputtered a-Ge:H
- Studies on Submerged Culture of Basidiomycetes : (III) The Oxygen Transfer within the Pellets of Lentinus edodes
- Light-Intensity Dependence of Photocreated Defects in Hydrogenated Amorphous Silicon-Nitrogen Alloy Films
- Effects of Transition Metal Additives on Electronic Properties in Amorphous GeSeTe Films
- A Laser Scanner Using Stacked Piezoelectric Ceramic Actuator : Photoacoustic Spectroscopy
- Hydrogen Incorporation Scheme in Amorphous-Microcrystalline Mixed-Phase Si: H Films
- Role of Hydrogen and Fluorine in Amorphous Silicon as Elucidated by NMR and ESR
- NMR and IR Studies on Hydrogenated Amorphous Si_C_x Films
- Magneto-Optical Characteristics of Bi-Substituted Rare-Earth Iron Garnet Films Prepared by Laser Ablation
- Preparation of Pb(Zr, Ti)O_3 Films on Si Substrate by Laser Ablation
- Influence of Laser Fluence on Structural and Ferroelectric Properties of Lead-Zirconate-Titanate Thin Films Prepared by Laser Ablation : Thin Films
- Annealing Studies on Hydrogenated Amorphous Silicon-Tin Films
- ESR and Raman Studies on Hydrogenated Amorphous Si-Sn
- Activated Sludge Process using a Multistage Tower Aeration Tank
- Influence of Hydrogen Content and Si-H Bond Structure on Photocreated Dangling Bonds in Hydrogenated Amorphous Silicon Films
- Light-Induced ESR in Variously Treated Hydrogenated Amorphous Silicon
- Relationship between Electrical Conductivity and Charged-Dangling-Bond Density in Nitrogen- and Phosphorus-Doped Hydrogenated Amorphous Silicon
- Light-Induced-ESR Study of Undoped and N-Doped Hydrogenated Amorphous Silicon
- Spectroscopic Study on N_O-Plasrma Oxidation of Hydrogenated Amorphous Silicon and Behavior of Nitrogen
- Light Soaking of a-Si:H at 77 K
- Contribution of Floating Bonds to Photocreation of Defects in a-Si:H
- Structure of Films Prepared by Glow Discharge Decomposition of Hexafluorodisilane
- Hydrogen Incorporation Scheme in a-Si_C_x:H
- Rate Equations for the Creation of Various Metastable Dangling Bonds in a-Si:H Mediated by Floating Bonds
- Properties of Amorphous Si Prepared by RF Sputtering with a High Ar Pressure
- Influence of Oxygen and Deposition Conditions on RF-Sputtered Amorphous Si Films
- Structural Studies on Hydrogenated Amorphous Germanium-Carbon Films Prepared by RF Sputtering
- NMR and ESR Studies on a-Si:H Prepared by Glow Discharge Decomposition of Si_2H_6
- ESR Study on Silica Exposed to Glow-Discharge Plasma and UV Light
- A Model for the Staebler-Wronski Effect Based on Charged Impurities
- The Effects of H and F on the ESR Signals in a-Si
- The g-Values of Defects in Amorphous C, Si and Ge
- A Metal Doping Effect in an Electron Beam Sensitive Resist
- Effect of Charged Defects on Properties of Amorphous Si-Based Alloys
- ESR Studies on the Light-Induced Effect in Si-Based Amorphous Semiconductors
- Double Twin Path Interferometer for Thin Film Thickness Measurement
- CW Laser Oscillation of Visible and Near-Infrared Hg(II) Lines in a He-Hg Positive Column Discharge
- CW Laser Oscillation of Cd(II) and I(II) Lines in a He-CdI_2 Positive Column Discharge
- Auto-Recording Type Spectrometer for the Magneto-Optical Rotatory Dispersion
- Nuclear Spin-Spin Coupling between Protons in Vinyl Derivatives
- Population Densities of He Excited States in a Positive Column Discharge Used for the He-Cd^+ Laser
- On the Determination of the Electron Density in a Positive Column He-Metal Laser Discharge Having a Non-Maxwellian Electron Energy Distribution
- C-Si-O(B) Thin Film-A Possible X-Ray Mask Substrate Candidate
- Bubbles Formed by Plasma Polymerization of MMA in a Tail Flame of SF_6-Ar-MMA Mixture Discharge
- Electron Beam Vacuum Lithography Using a Plasma Co-Polymerized MMA-TMT Resist
- Measurement of SAW Propagation Properties Using a Laser Probe : Fundamentals
- Laser Probe for Surface Acoustic Wave Measurements : Physical Acoustics I
- Ion Sampling Study in Gaseous Plasmas Using a Simple QMF
- Determination of the Penning Excitation Cross Sections of Mg Atoms by He,Ne and Ar Metastable Atoms
- Penning Excitation Cross Sections for the Individual Zn (II) States by He 2^1S and He 2^3S Metastable Atoms
- A Property of Noise in the Retarding Field Energy Analyzer
- Mass Spectrometry Ion Sampling on the Positive Column DC Discharge Plasmas
- A Flash Lamp with Toroidal Discharge Excitation
- Anomalous Saturation Characteristics of Output Powers of Ar^+ Ion Lasers and Influence of Pinch Effects
- A New Type VUV Detector with Plane Electrodes Deposited on a Crystalline Quartz