C-Si-O(B) Thin Film-A Possible X-Ray Mask Substrate Candidate
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概要
- 論文の詳細を見る
The formation of a C-Si-O(B) compound by plasma CVD at an rf frequency of 13.56 MHz is described. B_2H_6 (5.25 (vol.%) in nitrogen) and CH_4 were the reactant gases. Argon and nitrogen were used alternatively as the carrier gases. The substrate temperature was in the range 150-300℃. The films were inadvertently formed. However, although they had been inadvertently obtained they could be reproduced. The depth profiles of those films are given to explain the deposition mechanism. The exposure of those films to the UVSOR is also illustrated.
- 社団法人応用物理学会の論文
- 1987-04-20
著者
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HATTORI Shuzo
Department of Electrical and Computer Engineering, Nagoya Institute of Technology
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MORITA Shinzo
Department of Electrical and Electronic Engineering and Information Engineering, Nagoya University
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Yamada Hitomi
Department Of Electronics Faculty Of Engineering Nagoya University
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MONTASSER Kadry
Department of Electronics, Faculty of Engineering, Nagoya University
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Montasser Kadry
Department Of Electronics Faculty Of Engineering Nagoya University
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Morita Shinzo
Department Of Electronics Faculty Of Engineering Nagoya University
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