Electron Beam Vacuum Lithography Using a Plasma Co-Polymerized MMA-TMT Resist
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概要
- 論文の詳細を見る
The dry development of an Sn containing electron-beam-sensitive resist produced by plasma polymerization is described. The dry development was performed using self-development, with good results. In order to raise the e-beam sensitivity for self development, a little metal was added to an organic resist. It was found that a plasma co-polymerized methyl methacrylate tetramethyltin resist "PP (MMA-TMT)" had a sensitivity of 20 μC/cm^2 and a γ value of 3.
- 社団法人応用物理学会の論文
- 1982-05-20
著者
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HATTORI Shuzo
Department of Electrical and Computer Engineering, Nagoya Institute of Technology
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Yamada Masao
Department Of Cardiology Tokyo Medical University
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MORITA Shinzo
Department of Electrical and Electronic Engineering and Information Engineering, Nagoya University
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Morita Shinzo
Department Of Electrical Engineering Meijo University
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Hattori Shuzo
Department Of Electronic Engineering Nagoya University
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Yoneda Katsumi
Department Of Electrical Engineering Faculty Of Science And Technology Meijyo University
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Yoneda Katsumi
Department Of Electrical Engineering Mejo University
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TAMANO Junji
Department of Electronic Engineering, Nagoya University
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Tamano Junji
Department Of Electronic Engineering Nagoya University
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Yamada Masao
Department Of Electronic Engineering Nagoya University
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