Spectroscopic Study on N_O-Plasrma Oxidation of Hydrogenated Amorphous Silicon and Behavior of Nitrogen

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概要

• 論文の詳細を見る

• A novel oxidation process in hydrogenated amorphous silicon (a-Si:H) utilizing nitrous oxide (N_2O) plasma was established and studied in detail. The interfacial neutral defect density for the sample prepared in this process at 300℃ is greatly reduced compared with that obtained using O_2 plasma. The distribution and behavior of N incorporated in this oxide was examined in detail by means of X-ray photoelectron spectroscopy (XPS). As a result, the accumulation of N near the SiO_2/a-Si:H interface was confirmed. At low oxidation temperature, the N bonded to O exists near the oxide surface. The reasons for the reduction of the interfacial neutral defect density and for the accumulation of N near the interface are also shown. It is also clarified that this process utilizes the advantages of both the effect of atomic O and the accumulation of N near the interface.

• 社団法人応用物理学会の論文
• 1993-06-15

著者

• MASUDA Atsushi

  Department of Pathology and Cell Regulation, Kyoto Prefectural University of Medicine

• MASUDA Atsushi

  Japan Advanced Institute of Science and Technology

• YONEZAWA Yasuto

  Industrial Research Institute of Ishikawa (IRII)

• MINAMIKAWA Toshiharu

  Industrial Research Institute of Ishikawa (IRII)

• MORIMOTO Akiharu

  Department of Electrical and Computer Engineering, Faculty of Engineering, Kanazawa University

• SHIMIZU Tatsuo

  Department of Electrical and Computer Engineering, Faculty of Engineering, Kanazawa University

• KUMEDA Minoru

  Department of Electronics, Faculty of Technology, Kanazawa University

• Minamikawa Toshiharu

  Industrial Research Institute Of Ishikawa

• Kumeda M

  Kanazawa Univ. Kanazawa Jpn

• Kumeda Minoru

  Department Of Electrical And Computer Engineering Faculty Of Engineering Kanazawa University

• Masuda A

  Japan Advanced Institute Of Science And Technology

• Shimizu T

  Chiba Univ. Chiba Jpn

• Miura T

  Environmental Health Sciences Division National Lnstitute For Environmental Studies:(present Address

• Moto Akihiro

  The Authors Are With The Research Center For Superconductor Photonics Osaka University

• Yonezawa Y

  Industrial Research Institute Of Ishikawa

• Yonezawa Yasuto

  Industrial Research Institute Of Ishikawa

• FUKUSHI Iwao

  Department of Electronics, Faculty of Technology, Kanazawa University

• Masuda Atsushi

  Department Of Neurosurgery Shimizu Hospital

• Fukushi Iwao

  Department Of Electronics Faculty Of Technology Kanazawa University

• Shimizu Tatsuo

  Department Of Applied Physics University Of Tokyo

• Masuda Atsushi

  Department Of Neurosurgery Eisyokai Yoshida Hospital

• Masuda Atsushi

  Department of Electrical and Computer Engineering, Faculty of Engineering,

• Morimoto Akiharu

  Department of Electrical and Computer Engineering, Faculty of Engineering,

• Kumeda Minoru

  Department of Electric and Electronic Engineering. Kanazawa University

• KUMEDA Minoru

  Department of Electronics Faculty of Technology, Kanazawa University

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