Preparation of Low-Stress SiNx Films by Catalytic Chemical Vapor Deposition at Low Temperatures
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概要
- 論文の詳細を見る
Silicon nitride (SiNx) films were prepared by catalytic chemical vapor deposition (Cat-CVD) at low substrate temperatures below 130°C. The stress in the films was low, typically lower than 100 MPa, and could be varied from compressive to tensile by changing the deposition conditions used. The cause of the changes in stress was investigated from the relationship between film properties and deposition conditions. Stress was more compressive when the SiH4 flow rate was high, while it was more tensile when the substrate temperature and gas pressure were high. This is attributed to the shrinkage of the film accompanied by gas desorption from the growing surface. The gas desorption is enhanced by the elevation of substrate temperature and the attack of atomic hydrogen. The gas desorption also leads to low hydride densities and high mass densities. The SiNx films prepared by Cat-CVD can be used for passivating organic materials.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-06-15
著者
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Matsumura Hideki
Japan Advanced Inst. Sci. And Technol. (jaist) Ishikawa Jpn
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MASUDA Atsushi
Japan Advanced Institute of Science and Technology
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TAKANO Masahiro
Industrial Research Institute of Ishikawa (IRII)
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NIKI Toshikazu
Japan Science and Technology Agency (JST)
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HEYA Akira
Industrial Research Institute of Ishikawa (IRII)
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OSONO Tetsuo
Japan Advanced Institute of Science and Technology (JAIST)
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UMEMOTO Hironobu
Japan Advanced Institute of Science and Technology (JAIST)
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Minamikawa Toshiharu
Industrial Research Institute Of Ishikawa
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Muroi Susumu
Ishikawa Seisakusho Ltd.
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Yonezawa Yasuto
Industrial Research Institute Of Ishikawa
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Minami Shigehira
Ishikawa Seisakusho Ltd.
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Masuda Atsushi
Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Tatsunokuchi, Nomi, Ishikawa 923-1292, Japan
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Umemoto Hironobu
Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Tatsunokuchi, Nomi, Ishikawa 923-1292, Japan
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Osono Tetsuo
Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Tatsunokuchi, Nomi, Ishikawa 923-1292, Japan
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Minamikawa Toshiharu
Industrial Research Institute of Ishikawa (IRII), 2-1 Kuratsuki, Kanazawa, Ishikawa 920-8203, Japan
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Yonezawa Yasuto
Industrial Research Institute of Ishikawa (IRII), 2-1 Kuratsuki, Kanazawa, Ishikawa 920-8203, Japan
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Heya Akira
Industrial Research Institute of Ishikawa (IRII), 2-1 Kuratsuki, Kanazawa, Ishikawa 920-8203, Japan
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Takano Masahiro
Industrial Research Institute of Ishikawa
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Minami Shigehira
Ishikawa Seisakusho, Ltd., 200 Fukudome, Matto, Ishikawa 924-0051, Japan
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Matsumura Hideki
Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Tatsunokuchi, Nomi, Ishikawa 923-1292, Japan
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Niki Toshikazu
Japan Science and Technology Agency (JST), 2-13 Asahidai, Tatsunokuchi, Nomi, Ishikawa 923-1211, Japan
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