Reduction of Droplet Formatiom by Reducing Target Etching Rate in Pulsed Laser Ablation

スポンサーリンク

概要

• 論文の詳細を見る

• Droplet formation in the film and maximum etching depth of the target in the process of pulsed-laser-ablation (PLA) deposition were investigated by scanning tunneling microscopy and stylus profilometry, respectively. The ratio of the droplet volume to the film volume (V_d/V_f) was found to be proportional to d^3_e (d_e being the maximum etching depth of the target) for a variety of ablated materials and wavelengths of the laser. This fact suggests that a laser with a low fluence, a short wavelength and a short pulse width, and a high-density target are preferred for the preparation of film with fewer droplets.

• 社団法人応用物理学会の論文
• 1994-08-15

著者

• YONEZAWA Yasuto

  Industrial Research Institute of Ishikawa (IRII)

• MINAMIKAWA Toshiharu

  Industrial Research Institute of Ishikawa (IRII)

• MORIMOTO Akiharu

  Department of Electrical and Computer Engineering, Faculty of Engineering, Kanazawa University

• SHIMIZU Tatsuo

  Department of Electrical and Computer Engineering, Faculty of Engineering, Kanazawa University

• Shimizu Tadao

  Department Of Physics University Of Tokyo

• Shimizu T

  Department Of Electrical And Electronic Engineering Kanazawa University

• MINAMIKAWA Toshiharu

  Department of Electrical and Computer Engineering, Faculry of Engineering, Kanazawa University

• SEGAWA Kazuhito

  Industrial Research Institute of Ishikawa

• Shimizu T

  Chiba Univ. Chiba Jpn

• Miura T

  Environmental Health Sciences Division National Lnstitute For Environmental Studies:(present Address

• Segawa K

  Osaka Electro‐communication Univ. Osaka Jpn

• Moto Akihiro

  The Authors Are With The Research Center For Superconductor Photonics Osaka University

• Yonezawa Y

  Industrial Research Institute Of Ishikawa

• Yonezawa Yasuto

  Industrial Research Institute Of Ishikawa

• KATAYAMA Syuji

  Department of Electrical and Computer Engineering, Faculty of Technology, Kanazawa Universiry

• Katayama Syuji

  Department Of Electrical And Computer Engineering Faculty Of Technology Kanazawa Universiry

• Shimizu Tatsuo

  Department Of Applied Physics University Of Tokyo

• Morimoto Akiharu

  Department of Electrical and Computer Engineering, Faculty of Engineering,

関連論文

• Preparation of Low-Stress SiN_x Films by Catalytic Chemical Vapor Deposition at Low Temperatures
• Improvement of Deposition Rate by Sandblasting of Tungsten Wire in Catalytic Chemical Vapor Deposition
• Moisture-Resistive Properties of SiN_x Films Prepared by Catalytic Chemical Vapor Deposition below 100℃ for Flexible Organic Light-Emitting Diode Displays
• Effect of Atomic Hydrogen on Preparation of Highly Moisture-Resistive SiN_x Films at Low Substrate Temperatures
• Highly Moisture-Resistive SiN_x Films Prepared by Catalytic Chemical Vapor Deposition
• Annealing Effect of Pb(Zr, Ti)O_3 Ferroelectric Capacitor in Active Ammonia Gas Cracked by Catalytic Chemical Vapor Deposition System
• Influence of Buffer Layers on Lead Magnesium Niobate Titanate Thin Films Prepared by Pulsed Laser Ablation
• Effect of Oxygen Pressure on (Ba_xSr_)TiO_3 Thin Films by Pulsed Laser Ablation
• Structural and Electrical Characterization of Oxidated, Nitridated and Oxi-nitridated (100) GaAs Surfaces
• Fast and Slow Processes in Light-Induced Electron Spin Resonance in Hydrogenated Amorphous Si-N Films
• Proton Nuclear Magnetic Resonance Studies on Structural Changes Induced by Annealing of Hydrogenated Amorphous Silicon Films Prepared at High Deposition-Rate
• Mossbauer Time Spectra of the Nuclear Forward Scattering from Coherently Vibrating Resonant Nuclei
• Reduction of Interface Defect Density by Hydrogen Dilution in a-Si:H/ZnS Multilayer Films
• Identification of a New Defect in Silicon Nitride Films
• Thermal Equilibration of Defect Density in Hydrogenated Amorphous Silicon-Germanium Alloys
• Comparison between ESR and CPM for the Gap States in a-Si-Ge:H
• Temperature Simulation of Cooling Process of Ge Droplets in Laser Droplet Epitaxy(Surfaces, Interfaces, and Films)
• Preparation of Twin- and Crack-Free LiNbO_3 Films by Pulsed Laser Ablation Using Nucleation Process at High Temperature : Surfaces, Interfaces, and Films
• Rotational Honeycomb Epitaxy of Ru Thin Films on Sapphire (0001) Substrate : Surfaces, Interfaces, and Films
• Preparation of Pb(Zn_Ti_)O_3 Films by Laser Ablation
• Thermal Analysis of Target Surface in the Ba-Y-Cu-O Film Preparation by Laser Ablation Method
• Preparation of Ba-Y-Cu-O Superconducting Films by Laser Ablation with and without Laser Irradiation on Growing Surface : Special Section : Solid State Devices and Materials 2 : Thin Film Devices and Superconductors
• a-Si_O_x:H Films Prepared by Direct Photo-CVD Using CO_2 Gas : Condensed Matter
• Preparation of Ba_2YCu_3O_x Superconducting Films by Laser Evaporation and Rapid Laser Annealing : Electrical Properties of Condensed Matter
• Mechanism of Stoichiometric Deposition of Volatile Elements in Multimetal-Oxide Films Prepared by Pulsed Laser Ablation
• Annealing Temperature Dependence of MgO Substrates on the Quality of YBa_2Cu_3O_x Films Prepared by Pulsed Laser Ablation
• Influence of Sub-Gap Illumination on Light-Induced ESR in Undoped a-Si:H
• Temperature-Independent Photoluminescence in Amorphous Si_C_x:(F,H) Films with Low Defect Density
• Glow Discharge a-Si_C_x: H Films Studied by ESR and IR Measurements
• ESR and IR Studies on a-Si_Ge_x: H Prepared by Glow Discharge Decomposition
• Properties of Hydrogenated Amorphous Si-N Prepared by Various Methods
• Thin Film Patterning by Laser Lift-Off
• Comparative Study of Defect Densities Evaluated by Electron Spin Resonance and Constant Photocurrent Method in Undoped and N-Doped Hydrogenated Amorphous Silicon
• Electron-Beam-Induced Nucleation Centers and Selective Deposition of Thin Zinc Films
• Photocreated Defects in Very Thin Hydrogenated Amorphous Silicon Films : Semiconductors
• Partial Recovery of Photodegradation at Room Temperature in Hydrogenated Amorphous Silicon
• Relation between Electron-Spin-Resonance and Constant-Photocurrent-Method Defect Densities in Hydrogenated Amorphous Silicon
• Preparation of Epitaxial Ge Film on Si by Pulsed Laser Ablation Using Molten Droplets
• Change of Spin-Lattice Relaxation Time with Light Soaking for Defects in Hydrogenated Amorphous Silicon
• Removal of Surface Oxides on Copper by Pulsed Laser lrradiation
• Relation between ESR and Hydrogen in Magnetron-Sputtered a-Ge:H
• Studies on Submerged Culture of Basidiomycetes : (III) The Oxygen Transfer within the Pellets of Lentinus edodes
• Light-Intensity Dependence of Photocreated Defects in Hydrogenated Amorphous Silicon-Nitrogen Alloy Films
• Effects of Transition Metal Additives on Electronic Properties in Amorphous GeSeTe Films
• Hydrogen Incorporation Scheme in Amorphous-Microcrystalline Mixed-Phase Si: H Films
• Role of Hydrogen and Fluorine in Amorphous Silicon as Elucidated by NMR and ESR
• NMR and IR Studies on Hydrogenated Amorphous Si_C_x Films
• Study on Estimation of Metal Film Thickness by Attenuated Total Reflection
• Magneto-Optical Characteristics of Bi-Substituted Rare-Earth Iron Garnet Films Prepared by Laser Ablation
• Preparation of Pb(Zr, Ti)O_3 Films on Si Substrate by Laser Ablation
• Influence of Laser Fluence on Structural and Ferroelectric Properties of Lead-Zirconate-Titanate Thin Films Prepared by Laser Ablation : Thin Films
• Annealing Studies on Hydrogenated Amorphous Silicon-Tin Films
• ESR and Raman Studies on Hydrogenated Amorphous Si-Sn
• Activated Sludge Process using a Multistage Tower Aeration Tank
• Influence of Hydrogen Content and Si-H Bond Structure on Photocreated Dangling Bonds in Hydrogenated Amorphous Silicon Films
• Light-Induced ESR in Variously Treated Hydrogenated Amorphous Silicon
• Relationship between Electrical Conductivity and Charged-Dangling-Bond Density in Nitrogen- and Phosphorus-Doped Hydrogenated Amorphous Silicon
• Light-Induced-ESR Study of Undoped and N-Doped Hydrogenated Amorphous Silicon
• Spectroscopic Study on N_O-Plasrma Oxidation of Hydrogenated Amorphous Silicon and Behavior of Nitrogen
• Light Soaking of a-Si:H at 77 K
• Contribution of Floating Bonds to Photocreation of Defects in a-Si:H
• Structure of Films Prepared by Glow Discharge Decomposition of Hexafluorodisilane
• Hydrogen Incorporation Scheme in a-Si_C_x:H
• Rate Equations for the Creation of Various Metastable Dangling Bonds in a-Si:H Mediated by Floating Bonds
• Properties of Amorphous Si Prepared by RF Sputtering with a High Ar Pressure
• Influence of Oxygen and Deposition Conditions on RF-Sputtered Amorphous Si Films
• Structural Studies on Hydrogenated Amorphous Germanium-Carbon Films Prepared by RF Sputtering
• NMR and ESR Studies on a-Si:H Prepared by Glow Discharge Decomposition of Si_2H_6
• ESR Study on Silica Exposed to Glow-Discharge Plasma and UV Light
• A Model for the Staebler-Wronski Effect Based on Charged Impurities
• The Effects of H and F on the ESR Signals in a-Si
• The g-Values of Defects in Amorphous C, Si and Ge
• Effect of Charged Defects on Properties of Amorphous Si-Based Alloys
• ESR Studies on the Light-Induced Effect in Si-Based Amorphous Semiconductors
• Impairment of MicrobiaI Killing and Superoxide-Producing Activities of Alveolar Macrophages by a Low Level of Ozone
• Reduction of Droplet Formatiom by Reducing Target Etching Rate in Pulsed Laser Ablation
• Laser-Irradiation Induced a-Axis Orientation in c-Axis-Oriented YBa_2Cu_3O_x Films Prepared by Pulsed Laser Ablation
• ESR and X-Ray Diffraction Studies on Ba-Y-Cu-O Superconductors : Electrical Properties of Condensed Matter
• Preparation of Ti-Al-N Electrode Films by Pulsed Laser Ablation for Lead-Zirconate-Titanate Film Capacitors
• Highty Oriented Pb(Zr, Ti)O_3 Thin Films Prepared by Pulsed Laser Ablation GaAs and Si Substrates with MgO Buffer Layer
• Fatigue Behavior in Lead-Zirconate-Titanate Thin-Film Capacitors Prepared by Pulsed Laser Ablation on Ni-Alloy Electrodes
• NH_3-Plasma-Nitridation Process of (100) GaAs Surface Observed by Angle-Dependent X-Ray Photoelectron Spectroscopy
• Effective Electron Correlation Energy in Amorphous Ge-S
• Relationship between Photodarkening and Light-Induced ESR in Amorphous Ge-S Films Alloyed with Lead
• Nuclear Spin-Spin Coupling between Protons in Vinyl Derivatives
• Light-Induced Effects and Their Annealing Behavior in a-Si:H
• Photo-Induced ESR in Amorphous Si_N_x:H Films
• Spin-Lattice Relaxation of Shallow Acceptors in Strained Silicon
• Effect of Reduction in Impurity Content for a-Si:H Films
• ESR and Constant Photocurrent Studies of Surface and Bulk Defects in a-Si:H
• Hydrogen Evolution from Amorphous Si-N Films
• Light-Induced Effects in a-Si:H Studied by ESR and Electrical Measurements
• Evidence of the Existence of SiF_4 Molecules in Fluorinated Amorphous Silicon
• Stepwise Change of Electrical and Thermodynamical Properties of (As_Te_)_Ge_x Glass with x
• Photoluminescence in Glow Discharge Deposited Amorphous Si_C_x: H Films
• Structural Analysis on T_c Variation of Bi_2Sr_Ca_Cu_2O_
• Structure and Defects in Amorphous Si-O Films
• Synthesis and Characterization of Amorphous Si-Zn-S Alloy Films
• Influence of Buffer Layers on Lead Magnesium Niobate Titanate Thin Films Prepared by Pulsed Laser Ablation

もっと見る 閉じる

スポンサーリンク