Effect of Reduction in Impurity Content for a-Si:H Films
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概要
- 論文の詳細を見る
a-Si:H films with various impurity contents were prepared by three kinds of glow discharge decomposition systems. The impurity content for films prepared by these systems was determined by SIMS, and the dart< conductivity and the density of charged dangling bonds were also measured. The following results were obtained: the dark conductivity σ_d, the activation energy E_a and the density of charged dangling bonds are closely correlated with the N and/or O impurity content. These results suggest that the Fermi level and the charged dangling bond density in a-Si:H are largely affected by the presence of the impurity-defect pair such as N^+_4+Si^-_3 and/or O^+_3+Si^-_3.
- 社団法人応用物理学会の論文
- 1990-10-20
著者
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MORIMOTO Akiharu
Department of Electrical and Computer Engineering, Faculty of Engineering, Kanazawa University
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SHIMIZU Tatsuo
Department of Electrical and Computer Engineering, Faculty of Engineering, Kanazawa University
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Kumeda M
Kanazawa Univ. Kanazawa Jpn
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Kumeda Minoru
Department Of Electrical And Computer Engineering Faculty Of Engineering Kanazawa University
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Shimizu T
Chiba Univ. Chiba Jpn
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Moto Akihiro
The Authors Are With The Research Center For Superconductor Photonics Osaka University
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MATSUMOTO Minoru
Department of Electronics, Faculty of Technology, Kanazawa University
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Matsumoto Minoru
Department Of Electronics Faculty Of Technology Kanazawa University
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Shimizu Tatsuo
Department Of Applied Physics University Of Tokyo
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Morimoto Akiharu
Department of Electrical and Computer Engineering, Faculty of Engineering,
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Kumeda Minoru
Department of Electric and Electronic Engineering. Kanazawa University
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KUMEDA Minoru
Department of Electronics Faculty of Technology, Kanazawa University
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