Influence of Oxygen and Deposition Conditions on RF-Sputtered Amorphous Si Films
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概要
- 論文の詳細を見る
Amorphous Si films prepared by rf sputtering have very different properties depending on the Ar gas pressure and the substrate-target spacing during sputtering.The electrical conductivity at room temperature is decreased by about five orders of magnitude by changing the Ar gas pressure from 2×10^<-2>to 3×10^<-1>Torr.Analyses by electron spin resonance and electron probe microanalyzer revealed that films prepared under low pressure contain more defects and Ar atoms.Since infrared absorption, presumably due to Si-O stretching vibration, appears in high-pressure samples, the effect of oxygen was also investigated by intentionally incorporating oxygen into the films during sputtering.These films, however, behaved defferently from the films sputtered under high pressure.
- 社団法人応用物理学会の論文
- 1979-10-05
著者
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Watanabe Ichiro
Department of Cardiology, Nihon University School of Medicine
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SHIMIZU Tatsuo
Department of Electrical and Computer Engineering, Faculty of Engineering, Kanazawa University
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KUMEDA Minoru
Department of Electronics, Faculty of Technology, Kanazawa University
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Kumeda Minoru
Department Of Electrical And Computer Engineering Faculty Of Engineering Kanazawa University
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KAMONO Kiyohide
Department of Electronics, Faculty of Technology, Kanazawa University
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Shimizu Tatsuo
Department Of Applied Physics University Of Tokyo
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Watanabe Ichiro
Department Of Electronics Faculty Of Technology Kanazawa University
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Kamono Kiyohide
Department Of Electronics Faculty Of Technology Kanazawa University
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Kumeda Minoru
Department of Electric and Electronic Engineering. Kanazawa University
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