Influence of Contamination in Repeated Depositions on the Properties of Diamond Films
スポンサーリンク
概要
- 論文の詳細を見る
Carbon contamination attached to a reaction system during the growth of diamond films by microwave plasma chemical vapor deposition elicits a decrease in the growth rate of the films, but it does not result in appreciable change in the quality of the films. Good reproducibility in the growth rate is attained by plasma etching of the contamination by carbon tetrafluoride with a small amount of oxygen.
- 社団法人応用物理学会の論文
- 1992-04-15
著者
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Watanabe Ichiro
Department of Cardiology, Nihon University School of Medicine
-
Yamashita Takashi
Department Of Biotechnology And Chemistry School Of Engineering Kinki University
-
Sugimoto Masato
Department Of Electrical And Computer Engineering Faculty Of Technology Kanazawa University
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Yamashita Takashi
Department Of Electrical And Computer Engineering Faculty Of Technology Kanazawa University
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Yamashita Takashi
Department Of Applied Chemistry School Of Science And Engineering Waseda University
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Watanabe Ichiro
Department Of Electrical And Computer Engineering Faculty Of Technology Kanazawa University
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