Effective Electron Correlation Energy in Amorphous Ge-S
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概要
- 論文の詳細を見る
Anomalous temperature dependence of ESR signal has been observed inamorphous Ge-S near the composition of Ge..S,.. The result is interpreted byassuming the presence of Ge dangling bonds with negative (&<0) and positiveeffective-electron-correlation-energy (U>O). The density of the defects withG<0 and U>0 are - 10" and - 10"cm ' respectively. In Ge..S.. glass,both S dangling bonds with U<0 and U>0 are likely to exist although the normaltemperature dependence of ESR signal is observed. Difference between bulk andfilm samples, and the effect of Ag doping are also studied. The magnitude ofthe negative U in various samples is correlated with the slope of the Urbach tailin the optical absorption edge.
- 社団法人日本物理学会の論文
- 1982-08-15
著者
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Watanabe Ichiro
Department of Cardiology, Nihon University School of Medicine
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SHIOMI Shigeru
Department of Physics Engineering, Faculty of Engineering, Mie University
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SHIMIZU Tatsuo
Department of Electrical and Computer Engineering, Faculty of Engineering, Kanazawa University
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Shiomi Shigeru
Department Of Electrical Engineering Faculty Of Engineering Nagoya University
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Shiomi Shigeru
Department Of Electronics Faculty Of Technology Kanazawa University
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Shimizu Tatsuo
Department Of Applied Physics University Of Tokyo
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