Effect of Substrate Bias on In-Plane Uniaxial Magnetic Anisotropy in Amorphous TbCo Films Prepared by DC-Sputtering
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概要
- 論文の詳細を見る
Amorphous TbCo films have been prepared by DC-sputtering. Without substrate bias, films have perpendicular anisotropy K_⊥ larger than 1×10^6 erg/cm^3 and negligibly small in-plane uniaxial anisotropy K_<//> regardless of film composition. With finite substrate bias, however, K_<//>: up to 9×10^5 erg/cm^3 is induced in Co-rich films. The easy axis is along the magnetic field applied for increasing the ionization efficiency. Both K_<//> and K_⊥ depend on substrate bias voltage, applied field strength and film composition. K_<//> can be increased by magnetic annealing with field along the easy axis. Magnetic annealing can rotate the in-plane easy axis
- 社団法人応用物理学会の論文
- 1991-03-01
著者
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IKEDA Takashi
Department of Electronic and Control Systems Engineering, Shimane University
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SHIOMI Shigeru
Department of Physics Engineering, Faculty of Engineering, Mie University
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MASUDA Morio
Department of Physics Engineering, Faculty of Engineering, Mie University
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Masuda Morio
Department Of Electronics Facultyr Of Engineering Mie University
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Masuda Morio
Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University
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Shiomi Shigeru
Department Of Electrical Engineering Faculty Of Engineering Nagoya University
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Koshiro Makoto
Department of Electronics, Faculty of Engineering, Mie University
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Koshiro Makoto
Department Of Electronics Faculty Of Engineering Mie University
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Ikeda Takashi
Department of Biological Sciences, Graduate School of Science, University of Tokyo
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Ikeda Takashi
Department of Electronics, Faculty of Engineering, Mie University
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