Dependence of Hot Electron Transport on Base Layer Thickness of Magnetic Tunnel Transistor
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概要
- 論文の詳細を見る
The hot electron transport phenomenon has been investigated in magnetic tunnel transistors with various base layer thicknesses. In terms of Au layer thickness, the magneto-current and the transfer ratio were at a maximum when the Au layer thickness was approximately 8.0 nm. For the magnetic layer thickness, the transfer ratio decreased monotonically with increasing magnetic layer thickness. The magneto-current increased with increasing magnetic layer thickness up to 3.0 nm, and a maximum increase of approximately 370% was observed at 77 K.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-05-15
著者
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Kobayashi Tadashi
Department Of Cardiology Aichi Medical University
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Masuda Morio
Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University
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Shiomi Shigeru
Department Of Electrical Engineering Faculty Of Engineering Nagoya University
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Jimbo Mutsuko
Department Of Electrical And Electronics Engineering Daido Institute Of Technology
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Fujiwara Yuji
Department Of Physics Engineering Faculty Of Engineering Mie University
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Hirose Takakazu
Department Of Physics Engineering Faculty Of Engineering Mie University
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Hirose Takakazu
Department of Physics Engineering, Faculty of Engineering, Mie University, Kamihama 1515, Tsu 514-8507, Japan
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Jimbo Mutsuko
Department of Electrical Engineering, Daido Institute of Technology, Takiharu-cho 10-3, Minami-ku, Nagoya 457-8530, Japan
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Jimbo Mutsuko
Department of Electrical and Electronic Engineering, Daido University, Nagoya 457-8530, Japan
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Fujiwara Yuji
Department of Electronics and Electrical Engineering, Faculty of Science and Technology, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama 223-8522, Japan
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Fujiwara Yuji
Department of Physics Engineering, Faculty of Engineering, Mie University, Kamihama 1515, Tsu 514-8507, Japan
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Kobayashi Tadashi
Department of Physics Engineering, Faculty of Engineering, Mie University, Kamihama 1515, Tsu 514-8507, Japan
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Shiomi Shigeru
Department of Physics Engineering, Faculty of Engineering, Mie University, Kamihama 1515, Tsu 514-8507, Japan
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