Identification of a New Defect in Silicon Nitride Films

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1993-02-15

著者

• Yan H

  Chinese Acad. Sci. Shanghai Chn

• Yan Hui

  Department Of Pediatrics Peking University First Hospital

• SHIMIZU Tatsuo

  Department of Electrical and Computer Engineering, Faculty of Engineering, Kanazawa University

• KUMEDA Minoru

  Department of Electronics, Faculty of Technology, Kanazawa University

• Ishii N

  Central Research Laboratory Tokyo Electron Ltd.

• Ishii Nobuo

  Corporate R&d Central Research Laboratory Tokyo Electron Ltd.

• ISHII Nobuhiko

  Department o Electrical Engineertig, Fukui Institute of Technology

• Yan Hui

  Department Of Electronics Faculty Of Technology Kanazawa University

• Kumeda M

  Kanazawa Univ. Kanazawa Jpn

• Kumeda Minoru

  Department Of Electrical And Computer Engineering Faculty Of Engineering Kanazawa University

• Yan Haixue

  Shanghai Institute Of Ceramics Chinese Academy Of Sciences

• Shimizu T

  Chiba Univ. Chiba Jpn

• Shimizu Tatsuo

  Department Of Applied Physics University Of Tokyo

• Kumeda Minoru

  Department of Electric and Electronic Engineering. Kanazawa University

• KUMEDA Minoru

  Department of Electronics Faculty of Technology, Kanazawa University

関連論文

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• Effect of Oxygen Pressure on (Ba_xSr_)TiO_3 Thin Films by Pulsed Laser Ablation
• Fast and Slow Processes in Light-Induced Electron Spin Resonance in Hydrogenated Amorphous Si-N Films
• Proton Nuclear Magnetic Resonance Studies on Structural Changes Induced by Annealing of Hydrogenated Amorphous Silicon Films Prepared at High Deposition-Rate
• Mossbauer Time Spectra of the Nuclear Forward Scattering from Coherently Vibrating Resonant Nuclei
• Reduction of Interface Defect Density by Hydrogen Dilution in a-Si:H/ZnS Multilayer Films
• Identification of a New Defect in Silicon Nitride Films
• Thermal Equilibration of Defect Density in Hydrogenated Amorphous Silicon-Germanium Alloys
• Comparison between ESR and CPM for the Gap States in a-Si-Ge:H
• Temperature Simulation of Cooling Process of Ge Droplets in Laser Droplet Epitaxy(Surfaces, Interfaces, and Films)
• Preparation of Twin- and Crack-Free LiNbO_3 Films by Pulsed Laser Ablation Using Nucleation Process at High Temperature : Surfaces, Interfaces, and Films
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• Preparation of Pb(Zn_Ti_)O_3 Films by Laser Ablation
• Thermal Analysis of Target Surface in the Ba-Y-Cu-O Film Preparation by Laser Ablation Method
• Preparation of Ba-Y-Cu-O Superconducting Films by Laser Ablation with and without Laser Irradiation on Growing Surface : Special Section : Solid State Devices and Materials 2 : Thin Film Devices and Superconductors
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• ESR and IR Studies on a-Si_Ge_x: H Prepared by Glow Discharge Decomposition
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• Role of Hydrogen and Fluorine in Amorphous Silicon as Elucidated by NMR and ESR
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• ESR Studies on P^+ Ion-Implanted Si
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