Rate Equations for the Creation of Various Metastable Dangling Bonds in a-Si:H Mediated by Floating Bonds
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概要
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Using rate equations based on the creation and annihilation of a pair of a dangling bond and a floating bond and their interconversion, various metastable defect-creation processes in a-Si:H are quantitatively analyzed for the case of bandgap-light irradiation, electron-beam irradiation and thermal quenching from elevated temperatures. It is found that the calculated results can reproduce most of the observed results.
- 社団法人応用物理学会の論文
- 1999-08-15
著者
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SHIMIZU Tatsuo
Department of Electrical and Computer Engineering, Faculty of Engineering, Kanazawa University
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KUMEDA Minoru
Department of Electronics, Faculty of Technology, Kanazawa University
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Kumeda Minoru
Department Of Electrical And Computer Engineering Faculty Of Engineering Kanazawa University
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Shimizu Tatsuo
Department Of Applied Physics University Of Tokyo
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Kumeda Minoru
Department of Electric and Electronic Engineering. Kanazawa University
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