Preparation of Pb(Zr, Ti)O_3 Films on Si Substrate by Laser Ablation

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概要

• 論文の詳細を見る

• Lead-zirconate-titanate (PZT) thin films were prepared on oxidized Si(100)-substrate with a thin film electrode by laser ablation. Ferroelectric perovskite phase was obtained in the PZT films on Ni-alloy/SiO_2/Si substrate with the substrate temperature above 500℃, but it was not obtained in the films on Pt/SiO_2/Si. The switching voltage of remanent polarization (P_r) decreased with decreasing PZT film thickness. The 0.15-μm-thick film showed P_r of 15 μC/cm^2 with a swing voltage of 5 V.

• 社団法人応用物理学会の論文
• 1992-09-30

著者

• MORIMOTO Akiharu

  Department of Electrical and Computer Engineering, Faculty of Engineering, Kanazawa University

• SHIMIZU Tatsuo

  Department of Electrical and Computer Engineering, Faculty of Engineering, Kanazawa University

• Moto A

  Department Of Electrical And Electronic Engineering Kanazawa University

• OGAWA Toshio

  Murata Manufacturing Co., Ltd.

• YASHIMA Hideyuki

  Department of Electrical and Computer Engineering, Faculty of Technology, Kanazawa University

• KIDOH Hideo

  Murata Manufacturing Co., Lid.

• Yashima Hideyuki

  Department Of Electrical And Computer Engineering Faculty Of Technology Kanazawa University:(present

• Shimizu Tatsuo

  Department Of Applied Physics University Of Tokyo

• Ogawa Toshio

  Murata Manufacturing Co. Ltd.

• SHIMIZU Tatsuo

  Department of Electronics, Faculty of Technology

• MORIMOTO Akiharu

  Department of Electronics, Faculty of Technology

• Morimoto Akiharu

  Department of Electrical and Computer Engineering, Faculty of Engineering,

• OGAWA Toshio

  Murata Manufacturing Co., Lid.:(Present address) Department of Electronic Engineering, Faculty of Science and Technology

• YASHIMA Hideyuki

  Department of Electronics, Faculty of Technology

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