Preparation of Pb(Zr, Ti)O_3 Films on Si Substrate by Laser Ablation
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概要
- 論文の詳細を見る
Lead-zirconate-titanate (PZT) thin films were prepared on oxidized Si(100)-substrate with a thin film electrode by laser ablation. Ferroelectric perovskite phase was obtained in the PZT films on Ni-alloy/SiO_2/Si substrate with the substrate temperature above 500℃, but it was not obtained in the films on Pt/SiO_2/Si. The switching voltage of remanent polarization (P_r) decreased with decreasing PZT film thickness. The 0.15-μm-thick film showed P_r of 15 μC/cm^2 with a swing voltage of 5 V.
- 社団法人応用物理学会の論文
- 1992-09-30
著者
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MORIMOTO Akiharu
Department of Electrical and Computer Engineering, Faculty of Engineering, Kanazawa University
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SHIMIZU Tatsuo
Department of Electrical and Computer Engineering, Faculty of Engineering, Kanazawa University
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Moto A
Department Of Electrical And Electronic Engineering Kanazawa University
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OGAWA Toshio
Murata Manufacturing Co., Ltd.
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YASHIMA Hideyuki
Department of Electrical and Computer Engineering, Faculty of Technology, Kanazawa University
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KIDOH Hideo
Murata Manufacturing Co., Lid.
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Yashima Hideyuki
Department Of Electrical And Computer Engineering Faculty Of Technology Kanazawa University:(present
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Shimizu Tatsuo
Department Of Applied Physics University Of Tokyo
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Ogawa Toshio
Murata Manufacturing Co. Ltd.
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SHIMIZU Tatsuo
Department of Electronics, Faculty of Technology
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MORIMOTO Akiharu
Department of Electronics, Faculty of Technology
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Morimoto Akiharu
Department of Electrical and Computer Engineering, Faculty of Engineering,
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OGAWA Toshio
Murata Manufacturing Co., Lid.:(Present address) Department of Electronic Engineering, Faculty of Science and Technology
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YASHIMA Hideyuki
Department of Electronics, Faculty of Technology
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