Photoluminescence in Glow Discharge Deposited Amorphous Si_<1-x>C_x: H Films
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概要
- 論文の詳細を見る
Composition and temperature dependences of photoluminescence (PL) spectrum in the amorphous Si_<1-xC_x: H films prepared from SiH_4 and CH_4 have been investigated. The decrease in the PL intensity with an increase in x is correlated with the increase in the spin density. From these results, it is found that the change of PL with the increase in x can be explained by the increase of the conduction band tail.
- 社団法人応用物理学会の論文
- 1982-10-20
著者
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Watanabe Ichiro
Department of Cardiology, Nihon University School of Medicine
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MORIMOTO Akiharu
Department of Electrical and Computer Engineering, Faculty of Engineering, Kanazawa University
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SHIMIZU Tatsuo
Department of Electrical and Computer Engineering, Faculty of Engineering, Kanazawa University
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Shimizu Tatsuo
Department Of Electronics Faculty Of Technology Kanazawa University
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HATA Yukio
Department of Electronics, Faculty of Technology, Kanazawa University
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Shimizu Tatsuo
Department Of Applied Physics University Of Tokyo
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Hata Yukio
Department Of Electronics Faculty Of Technology Kanazawa University
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Morimoto Akiharu
Department of Electrical and Computer Engineering, Faculty of Engineering,
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