Properties of Amorphous Si Prepared by RF Sputtering with a High Ar Pressure
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概要
- 論文の詳細を見る
Amorphous Si films prepared under high Ar pressure are oxidized by exposure to air after preparation. In situ measurements show that the main reason for the low electrical conductivity of such films is not due to the oxidization. The film density is lower for the high Ar pressure film than for the low Ar pressure film, but the ESR center density is larger for the latter film. The former film is porous and has a low density of dangling bonds, while the latter film is more densely packed and has a higher density of dangling bonds.
- 社団法人応用物理学会の論文
- 1980-05-05
著者
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Watanabe Ichiro
Department of Cardiology, Nihon University School of Medicine
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SHIMIZU Tatsuo
Department of Electrical and Computer Engineering, Faculty of Engineering, Kanazawa University
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KUMEDA Minoru
Department of Electronics, Faculty of Technology, Kanazawa University
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Kumeda Minoru
Department Of Electrical And Computer Engineering Faculty Of Engineering Kanazawa University
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KIRIYAMA Yoshinari
Department of Electronics, Faculty of Technology, Kanazawa University
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Shimizu Tatsuo
Department Of Applied Physics University Of Tokyo
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Watanabe Ichiro
Department Of Electronics Faculty Of Technology Kanazawa University
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Kiriyama Yoshinari
Department Of Electronics Faculty Of Technology Kanazawa University
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Kumeda Minoru
Department of Electric and Electronic Engineering. Kanazawa University
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