Photocreated Defects in Very Thin Hydrogenated Amorphous Silicon Films : Semiconductors

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2001-11-15

著者

• Shimada M

  Ntt Microsystem Integration Lab. Kanagawa Jpn

• Shimada M

  Hiroshima Univ. Higashi‐hiroshima

• SHIMIZU Tatsuo

  Department of Electrical and Computer Engineering, Faculty of Engineering, Kanazawa University

• KUMEDA Minoru

  Department of Electronics, Faculty of Technology, Kanazawa University

• Shimizu T

  Univ. Occupational And Environmental Health Jpn

• Shimizu Tadao

  Department Of Physics University Of Tokyo

• Shimizu T

  Department Of Electrical And Electronic Engineering Kanazawa University

• Shimizu T

  Faculty Of Engineering Chiba University

• Kumeda M

  Kanazawa Univ. Kanazawa Jpn

• Kumeda Minoru

  Department Of Electrical And Computer Engineering Faculty Of Engineering Kanazawa University

• Shimada M

  Graduate School Of Natural Science And Technology Kanazawa University

• Shimizu Tatsuo

  Faculty Of Technology

• SHIMADA Masaki

  Greduate School of Natural Science and Technology, Kanazawa University

• Shimizu T

  Chiba Univ. Chiba Jpn

• Shimizu Tadao

  Department Of Industrial Chemistry Chiba Institute Of Technology

• Shimizu Tadao

  Department Of Physics Faculty Of Science The University Of Tokyo

• Shimizu Tatsuo

  Department Of Applied Physics University Of Tokyo

• Kumeda Minoru

  Department of Electric and Electronic Engineering. Kanazawa University

• KUMEDA Minoru

  Department of Electronics Faculty of Technology, Kanazawa University

関連論文

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• Plasma Shapes for Achieving High Heating Efficiency during Neutral Beam Injection in Doublet III
• Fast and Slow Processes in Light-Induced Electron Spin Resonance in Hydrogenated Amorphous Si-N Films
• Proton Nuclear Magnetic Resonance Studies on Structural Changes Induced by Annealing of Hydrogenated Amorphous Silicon Films Prepared at High Deposition-Rate
• Mossbauer Time Spectra of the Nuclear Forward Scattering from Coherently Vibrating Resonant Nuclei
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• Identification of a New Defect in Silicon Nitride Films
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