Gas-Phase Nucleation in an Atmospheric Pressure Chemical Vapor Deposition Process for SiO_2 Films Using Tetraethylorthosilicate (TEOS)
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1992-10-01
著者
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峠 登
近畿大学理工学部金属工学科
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峠 登
近畿大学
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OKUYAMA KIKUO
Department of Chemical Engineering, Graduate School of Engineering, Hiroshima University
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SHIMADA Manabu
Department of Chemical Engineering, Hiroshima University
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Satoh J
Mos Development Center Sony Nagasaki Corporation
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Adachi M
Toyama Prefectural Univ. Toyama Jpn
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Adachi Motoaki
Research Institute For Advanced Science And Technology Osaka Prefecture University
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Adachi Motoaki
Research Institute For Advanced Science And Techncology University Of Osaka Prefecture
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Shimada M
Ntt Microsystem Integration Lab. Kanagawa Jpn
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Shimada M
Hiroshima Univ. Higashi‐hiroshima
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Shimada Manabu
Department Of Chemical Engineering Faculty Of Engineering Hiroshima University
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Okuyama Kikuo
Department Of Chemical Engineering Faculty Of Engineering Hiroshima University
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SATO Jun-ichi
MOS Development Center, SONY Nagasaki Corporation
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MUROYAMA Masakazu
Process Technology Department, ULSI R&D Group, SONY Corporation
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TOHGE Noboru
Department of Applied Chemistry, College of Engineering, University of Osaka Prefecture
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Muroyama M
Sony Corp. Atsugi Jpn
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Muroyama Masakazu
Process Technology Department Ulsi R&d Group Sony Corporation
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Muroyama Masakazu
Process Division Semiconductor Company Sony Corporation
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SATOH Jun-ichi
Process Technology Department, ULSI R&D Group, SONY Corporation
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Adachi Motoaki
Research Institute For Advanced Science And Technology Universiry Of Osaka Prefecture
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Sato J
Hitachi Cable Ltd.
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ADACHI Masatoshi
Department of Electronics and Informatics, Faculty of Engineering, Toyama Prefectural University
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Shimada M
Graduate School Of Natural Science And Technology Kanazawa University
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Tohge Noboru
Department Of Applied Chemistry College Of Engineering University Of Osaka Prefecture
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Satoh J
Laboratory Of Animal Nutrition School Of Agriculture Ibaraki University
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