MUROYAMA Masakazu | Process Technology Department, ULSI R&D Group, SONY Corporation

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概要

• 同名の論文著者
• Process Technology Department, ULSI R&D Group, SONY Corporationの論文著者

関連著者

• MUROYAMA Masakazu

  Process Technology Department, ULSI R&D Group, SONY Corporation

• Muroyama Masakazu

  Process Division Semiconductor Company Sony Corporation

• OKUYAMA KIKUO

  Department of Chemical Engineering, Graduate School of Engineering, Hiroshima University

• Satoh J

  Mos Development Center Sony Nagasaki Corporation

• Adachi M

  Toyama Prefectural Univ. Toyama Jpn

• Adachi Motoaki

  Research Institute For Advanced Science And Technology Osaka Prefecture University

• Adachi Motoaki

  Research Institute For Advanced Science And Techncology University Of Osaka Prefecture

• Okuyama Kikuo

  Department Of Chemical Engineering Faculty Of Engineering Hiroshima University

• SATO Jun-ichi

  MOS Development Center, SONY Nagasaki Corporation

• Muroyama M

  Sony Corp. Atsugi Jpn

• Muroyama Masakazu

  Process Technology Department Ulsi R&d Group Sony Corporation

• Adachi Motoaki

  Research Institute For Advanced Science And Technology Universiry Of Osaka Prefecture

• Sato J

  Hitachi Cable Ltd.

• ADACHI Masatoshi

  Department of Electronics and Informatics, Faculty of Engineering, Toyama Prefectural University

• Satoh J

  Laboratory Of Animal Nutrition School Of Agriculture Ibaraki University

• 峠 登

  近畿大学理工学部金属工学科

• 峠 登

  近畿大学

• SHIMADA Manabu

  Department of Chemical Engineering, Hiroshima University

• Shimada M

  Ntt Microsystem Integration Lab. Kanagawa Jpn

• Shimada M

  Hiroshima Univ. Higashi‐hiroshima

• Shimada Manabu

  Department Of Chemical Engineering Faculty Of Engineering Hiroshima University

• TOHGE Noboru

  Department of Applied Chemistry, College of Engineering, University of Osaka Prefecture

• Shimada M

  Graduate School Of Natural Science And Technology Kanazawa University

• Tohge Noboru

  Department Of Applied Chemistry College Of Engineering University Of Osaka Prefecture

• SATO Jun-ichi

  Process Technology Department, ULSI R & D Group, SONY Corporation

• Kitoh H

  Sony Corp. Atsugi Jpn

• FUJIMOTO Toshiyuki

  Department of Chemical Engineering, Faculty of Engineering, Hiroshima University

• Sato Jun-ichi

  Mos Development Center Sony Nagasaki Corporation

• KITOH Hideyuki

  Process Division, Semiconductor Company, Sony Corporation

• SATOH Jun-ichi

  Process Technology Department, ULSI R&D Group, SONY Corporation

• Fujimoto T

  Okayama Univ. Sci. Okayama Jpn

• Kitoh Hideyuki

  Process Division Semiconductor Company Sony Corporation

• Fujimoto Toshiyuki

  Department Of Applied Chemistry Muroran Institute Of Technology

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著作論文

• Morphology Control of Films Formed by Atmospheric-Pressure Chemical Vapor Deposition Using Tetraethylorthosilicate/Ozone System
• Formation of SiN Films by Plazma-Enhanced Chemical Vapor Deposition Using [(CH_3)_2N]_3SiN_3
• Precursors in Atmospheric-Pressure Chemical Vapor Deposition of Silica Films from Tetraethylorthosilicate/Ozone System
• Particle Generation and Film Formation in an Atmospheric-Pressure Chemical Vapor Deposition Reactor Using the Tetraethylorthosilicate (TEOS)/He, TEOS/O_2/He, and TEOS/O_3/He Systems
• Gas-Phase Nucleation in an Atmospheric Pressure Chemical Vapor Deposition Process for SiO_2 Films Using Tetraethylorthosilicate (TEOS)

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