Formation of SiN Films by Plazma-Enhanced Chemical Vapor Deposition Using [(CH_3)_2N]_3SiN_3

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1994-12-30

著者

• Kitoh H

  Sony Corp. Atsugi Jpn

• MUROYAMA Masakazu

  Process Technology Department, ULSI R&D Group, SONY Corporation

• Muroyama Masakazu

  Process Division Semiconductor Company Sony Corporation

• KITOH Hideyuki

  Process Division, Semiconductor Company, Sony Corporation

• Kitoh Hideyuki

  Process Division Semiconductor Company Sony Corporation

関連論文

• Morphology Control of Films Formed by Atmospheric-Pressure Chemical Vapor Deposition Using Tetraethylorthosilicate/Ozone System
• Formation of SiN Films by Plazma-Enhanced Chemical Vapor Deposition Using [(CH_3)_2N]_3SiN_3
• Precursors in Atmospheric-Pressure Chemical Vapor Deposition of Silica Films from Tetraethylorthosilicate/Ozone System
• Particle Generation and Film Formation in an Atmospheric-Pressure Chemical Vapor Deposition Reactor Using the Tetraethylorthosilicate (TEOS)/He, TEOS/O_2/He, and TEOS/O_3/He Systems
• Gas-Phase Nucleation in an Atmospheric Pressure Chemical Vapor Deposition Process for SiO_2 Films Using Tetraethylorthosilicate (TEOS)

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