Kumeda M | Kanazawa Univ. Kanazawa Jpn

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概要

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著作論文

Identification of a New Defect in Silicon Nitride Films
Thermal Equilibration of Defect Density in Hydrogenated Amorphous Silicon-Germanium Alloys
Comparison between ESR and CPM for the Gap States in a-Si-Ge:H
a-Si_O_x:H Films Prepared by Direct Photo-CVD Using CO_2 Gas : Condensed Matter
Temperature-Independent Photoluminescence in Amorphous Si_C_x:(F,H) Films with Low Defect Density
Glow Discharge a-Si_C_x: H Films Studied by ESR and IR Measurements
ESR and IR Studies on a-Si_Ge_x: H Prepared by Glow Discharge Decomposition
Properties of Hydrogenated Amorphous Si-N Prepared by Various Methods
Thin Film Patterning by Laser Lift-Off
Comparative Study of Defect Densities Evaluated by Electron Spin Resonance and Constant Photocurrent Method in Undoped and N-Doped Hydrogenated Amorphous Silicon
Electron-Beam-Induced Nucleation Centers and Selective Deposition of Thin Zinc Films
Photocreated Defects in Very Thin Hydrogenated Amorphous Silicon Films : Semiconductors
Relation between Electron-Spin-Resonance and Constant-Photocurrent-Method Defect Densities in Hydrogenated Amorphous Silicon
Change of Spin-Lattice Relaxation Time with Light Soaking for Defects in Hydrogenated Amorphous Silicon
Relation between ESR and Hydrogen in Magnetron-Sputtered a-Ge:H
Hydrogen Incorporation Scheme in Amorphous-Microcrystalline Mixed-Phase Si: H Films
Role of Hydrogen and Fluorine in Amorphous Silicon as Elucidated by NMR and ESR
NMR and IR Studies on Hydrogenated Amorphous Si_C_x Films
Influence of Hydrogen Content and Si-H Bond Structure on Photocreated Dangling Bonds in Hydrogenated Amorphous Silicon Films
Influence of Light-Soaking Temperature on the Distribution of Thermal-Annealing Activation Energies for Photocreated Dangling Bonds in Hydrogenated Amorphous Silicon
Distributions of Thermal-Annealing Activation Energies for Light-Induced Spins in Fast and Slow Processes in a-Si_N_x:H Alloys
Light-Induced ESR in Variously Treated Hydrogenated Amorphous Silicon
Light-induced Annealing of Photocreated Dangling Bonds in Hydrogenated Amorphous Silicon
Relationship between Electrical Conductivity and Charged-Dangling-Bond Density in Nitrogen- and Phosphorus-Doped Hydrogenated Amorphous Silicon
Light-Induced-ESR Study of Undoped and N-Doped Hydrogenated Amorphous Silicon
Decay Behavior of Light-Induced ESR in Hydrogenated Amorphous Silicon-Nitrogen Alloys
Spectroscopic Study on N_O-Plasrma Oxidation of Hydrogenated Amorphous Silicon and Behavior of Nitrogen
Light Soaking of a-Si:H at 77 K
A Model for the Staebler-Wronski Effect Based on Charged Impurities
The Effects of H and F on the ESR Signals in a-Si
The g-Values of Defects in Amorphous C, Si and Ge
Effect of Charged Defects on Properties of Amorphous Si-Based Alloys
ESR and X-Ray Diffraction Studies on Ba-Y-Cu-O Superconductors : Electrical Properties of Condensed Matter
Relationship between Photodarkening and Light-Induced ESR in Amorphous Ge-S Films Alloyed with Lead
Light-Induced Effects and Their Annealing Behavior in a-Si:H
Photo-Induced ESR in Amorphous Si_N_x:H Films
Effect of Reduction in Impurity Content for a-Si:H Films
ESR and Constant Photocurrent Studies of Surface and Bulk Defects in a-Si:H
Hydrogen Evolution from Amorphous Si-N Films
Light-Induced Effects in a-Si:H Studied by ESR and Electrical Measurements
Evidence of the Existence of SiF_4 Molecules in Fluorinated Amorphous Silicon

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