Light-induced Annealing of Photocreated Dangling Bonds in Hydrogenated Amorphous Silicon

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概要

• 論文の詳細を見る

• Light-induced annealing (LIA) of photocreated dangling bonds in hydrogenated amorphous silicon has been well comfirmed, but the mechanism for the LIA is still disputed. In order to distinguish the LIA from thermal annealing, we investigate the effect of the LIA on the distribution of thermal annealing activation energies for photocreated dangling bonds. We find that the LIA mainly annihilates the photocreated dangling bonds with a smaller thermal annealing activation energy. Taking this result into account, we discuss the models proposed for the LIA.

• 社団法人応用物理学会の論文
• 1995-04-15

著者

• Nishino T

  Mie Univ. Tsu Jpn

• Shimizu Tadao

  Department Of Physics University Of Tokyo

• Shimizu T

  Department Of Electrical And Electronic Engineering Kanazawa University

• SHIMIZU Tatsuo

  Faculty of Engineering, Kanazawa University

• Kumeda M

  Kanazawa Univ. Kanazawa Jpn

• Kumeda Minoru

  Faculty Of Technology

• Kumeda Minoru

  Faculty Of Engineering Kanazawa University

• Shimizu T

  Chiba Univ. Chiba Jpn

• Zhang Q

  Zhongshan Univ. Guangzhou Chn

• ZHANG Qing

  Faculty of Engineering, Kanazawa University

• NISHINO Takayuki

  Faculty of Technology, Kanazawa University

• KUMEDA Minoru

  Department of Electronics Faculty of Technology, Kanazawa University

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