Distributions of Thermal-Annealing Activation Energies for Light-Induced Spins in Fast and Slow Processes in a-Si_<1-x>N_x:H Alloys

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We report on the thermal annealing of light-induced neutral dangling bonds (DB's) created by strong band-gap illumination at 77 K and room temperature (RT) in amorphous silicon-nitrogen alloys (a-Si_<1-x>N_x:H). We find that the light-induced DB's are annealed out with distinct distributions of annealing activation energies (E_A's). The distribution for the light-induced DB's created in the fast process (FDB's) and the one for those created in the slow process (SDB's) are separated unambiguously: E_A for FDB's is in the range from 0 to 0.7 eV, in which two separated peaks (centered at about 0.09 and 0.4 eV) are embodied, and E_A for SDB's is in the range from 0.6 to 1.4 eV, centered at about 1 eV, in a-Si_<0.5>N_<0.5>:H. Moreover, the results demonstrate that the distributions of E_A for FDB's and SDB's depend on illumination temperature and illumination time.
社団法人応用物理学会の論文
1995-10-15