Decay Behavior of Light-Induced ESR in Hydrogenated Amorphous Silicon-Nitrogen Alloys
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概要
- 論文の詳細を見る
Light-induced ESR signals created by short-time illumination in Si-rich hydrogenated amorphous silicon-nitrogen films do not completely disappear after cessation of illumination. The remaining fraction of light-induced ESR spin density increases with increasing illumination time and illumination intensity, suggesting that a structural change proceeds with illumination.
- 社団法人応用物理学会の論文
- 1994-04-15
著者
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SHIMIZU Tatsuo
Faculty of Engineering, Kanazawa University
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Kumeda M
Kanazawa Univ. Kanazawa Jpn
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Kumeda Minoru
Faculty Of Technology
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Kumeda Minoru
Faculty Of Engineering Kanazawa University
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Shimizu T
Chiba Univ. Chiba Jpn
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Zhang Jieli
Department Of Physics Zhongshon University
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ZHANG Jinyan
Faculty of Engineering, Kanazawa University
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KUMEDA Minoru
Department of Electronics Faculty of Technology, Kanazawa University
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