NH_3-Plasma-Nitridation Process of (100) GaAs Surface Observed by Angle-Dependent X-Ray Photoelectron Spectroscopy
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概要
- 論文の詳細を見る
X-ray photoelectron spectroscopy with varying the photoelectron take-off angle reveals the surface-nitridation process of (100) GaAs by an rf NH_3 plasma with a magnetic field. The plasma treatment for shorter time or at lower temperature leads to the formation of a Ga-As-N ternary-compound layer on the GaAs surface. Increasing the treatment time or treatment temperature changes the main part of the surface layer into GaN due to the desorption of As. The oxidation resistance is also examined, showing that this plasma-nitridation method is one of the promising technologies for the passivation of (100) CaAs surface.
- 社団法人応用物理学会の論文
- 1995-02-28
著者
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MASUDA Atsushi
Department of Pathology and Cell Regulation, Kyoto Prefectural University of Medicine
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MASUDA Atsushi
Japan Advanced Institute of Science and Technology
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YONEZAWA Yasuto
Industrial Research Institute of Ishikawa (IRII)
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MORIMOTO Akiharu
Department of Electrical and Computer Engineering, Faculty of Engineering, Kanazawa University
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SHIMIZU Tatsuo
Department of Electrical and Computer Engineering, Faculty of Engineering, Kanazawa University
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Moto A
Department Of Electrical And Electronic Engineering Kanazawa University
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Shimizu Tadao
Department Of Physics University Of Tokyo
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Shimizu T
Department Of Electrical And Electronic Engineering Kanazawa University
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Masuda A
Japan Advanced Institute Of Science And Technology
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Shimizu T
Chiba Univ. Chiba Jpn
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Moto Akihiro
The Authors Are With The Research Center For Superconductor Photonics Osaka University
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Yonezawa Y
Industrial Research Institute Of Ishikawa
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Yonezawa Yasuto
Industrial Research Institute Of Ishikawa
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Masuda Atsushi
Department Of Neurosurgery Shimizu Hospital
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Shimizu Tatsuo
Department Of Applied Physics University Of Tokyo
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Masuda Atsushi
Department Of Neurosurgery Eisyokai Yoshida Hospital
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Masuda Atsushi
Department of Electrical and Computer Engineering, Faculty of Engineering,
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Morimoto Akiharu
Department of Electrical and Computer Engineering, Faculty of Engineering,
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