Air-Stable p-Type and n-Type Carbon Nanotube Field-Effect Transistors with Top-Gate Structure on SiN_x Passivation Films Formed by Catalytic Chemical Vapor Deposition
スポンサーリンク
概要
- 論文の詳細を見る
- 2005-09-13
著者
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Matsumura Hideki
Japan Advanced Inst. Sci. And Technol. (jaist) Ishikawa Jpn
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MAEHASHI Kenzo
The Institute of Scientific and Industrial Research, Osaka University
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MATSUMOTO Kazuhiko
The Institute of Scientific and Industrial Research, Osaka University
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Nakamura T
National Defense Acad. Kanagawa Jpn
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KAMINISHI Daisuke
The Institute of Scientific and Industrial Research, Osaka University
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OZAKI Hirokazu
The Institute of Scientific and Industrial Research, Osaka University
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OHNO Yasuhide
The Institute of Scientific and Industrial Research, Osaka University
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INOUE Koichi
The Institute of Scientific and Industrial Research, Osaka University
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SERI Yasuhiro
Japan Advanced Institute of Science and Technology
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MASUDA Atsushi
Japan Advanced Institute of Science and Technology
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NIKI Toshikazu
Ishikawa Seisakusho, Ltd.
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Ozaki Hirokazu
The Institute Of Scientific And Industrial Research Osaka University
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Maehashi Kenzo
The Institute Of Scientific And Industrial Research Osaka University
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Ohno Yasuhide
The Institute Of Scientific And Industrial Research Osaka University
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Kaminishi Daisuke
The Institute Of Scientific And Industrial Research Osaka University
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Nakamura T
Department Of Earth And Ocean Sciences National Defense Academy
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Matsumura Hideki
School Of Materials Science Japan Advanced Institute Of Science And Technology (jaist)
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Niki Toshikazu
Ishikawa Seisakusho Ltd.
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Masuda A
Japan Advanced Institute Of Science And Technology
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Matsumoto Kazuhiko
The Institute Of Scientific And Industrial Research Osaka University
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Inoue Koichi
The Institute For Solid State Physics University Of Tokyo
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Matsumura Hideki
School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST)
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