Low Voltage Operation of the Ferroelectric Pb(Zr, Ti)O_3 Capacitors Derived by Sol-Gel Method
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概要
- 論文の詳細を見る
- 1999-09-20
著者
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Nakamura T
National Defense Acad. Kanagawa Jpn
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NIKI Toshikazu
Ishikawa Seisakusho, Ltd.
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Nakamura Takanori
Functional Materials Research Dept. R & D Div. Murata Manufacturing Co. Ltd.
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Takasu H
R0hm Corp. Ltd. Kyoto Jpn
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Takasu Hidemi
Device Technology Div. Semiconductor Research And Development Headquarters Rohm Co. Ltd.
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Nakamura T
Department Of Earth And Ocean Sciences National Defense Academy
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Niki Toshikazu
Ishikawa Seisakusho Ltd.
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Fujimori Yoshikazu
Device Technology Div., Semiconductor R&D Headquarters, ROHM Co., Ltd.
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Nakamura Takashi
Device Technology Div., Semiconductor R&D Headquarters, ROHM Co., Ltd.
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TAKEDA Toshiyuki
Device Technology Div., Semiconductor Research and Development Headquarters, ROHM CO., LTD.
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Fujimori Y
Device Technology Div. Semiconductor Research And Development Headquarters Rohm Co. Ltd.
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Takeda Toshiyuki
Device Technology Div. Semiconductor Research And Development Headquarters Rohm Co. Ltd.
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