Low Voltage Operation of the Ferroelectric Pb(Zr, Ti)O_3 Capacitors Derived by Sol-Gel Method

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概要

• 論文の詳細を見る
• 1999-09-20

著者

• Nakamura T

  National Defense Acad. Kanagawa Jpn

• NIKI Toshikazu

  Ishikawa Seisakusho, Ltd.

• Nakamura Takanori

  Functional Materials Research Dept. R & D Div. Murata Manufacturing Co. Ltd.

• Takasu H

  R0hm Corp. Ltd. Kyoto Jpn

• Takasu Hidemi

  Device Technology Div. Semiconductor Research And Development Headquarters Rohm Co. Ltd.

• Nakamura T

  Department Of Earth And Ocean Sciences National Defense Academy

• Niki Toshikazu

  Ishikawa Seisakusho Ltd.

• Fujimori Yoshikazu

  Device Technology Div., Semiconductor R&D Headquarters, ROHM Co., Ltd.

• Nakamura Takashi

  Device Technology Div., Semiconductor R&D Headquarters, ROHM Co., Ltd.

• TAKEDA Toshiyuki

  Device Technology Div., Semiconductor Research and Development Headquarters, ROHM CO., LTD.

• Fujimori Y

  Device Technology Div. Semiconductor Research And Development Headquarters Rohm Co. Ltd.

• Takeda Toshiyuki

  Device Technology Div. Semiconductor Research And Development Headquarters Rohm Co. Ltd.

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