Fujimori Y | Device Technology Div. Semiconductor Research And Development Headquarters Rohm Co. Ltd.
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概要
- FUJIMORI Yoshikazuの詳細を見る
- 同名の論文著者
- Device Technology Div. Semiconductor Research And Development Headquarters Rohm Co. Ltd.の論文著者
関連著者
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Fujimori Y
Device Technology Div. Semiconductor Research And Development Headquarters Rohm Co. Ltd.
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Nakamura T
Hokkaido Univ. Sapporo Jpn
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Nakamura Takuya
The Faculty Of Engineering Saitama University
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Nakamura Tetsuro
School Of Electrical Engineering And Electronics Toyohashi University Of Technology
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Nakamura Toshihiko
Faculty Of Engineering Tokyo Institute Of Technology
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Kamisawa A
Process Technology Div. Ulsi R&d Headquarters Rohm Co. Ltd.
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Izumi Naoki
Process Technology Div. Ulsi R&d Headquarters Rohm Co. Ltd.
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Nakamura Tomohiko
The Institute Of Scientific And Industrial Research Osaka University
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Nakamura Tetsuro
Department Of Electrical Engineering And Electronics Toyohashi University Of Technology
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中村 高遠
静大院理工
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Nakamura Tomoyuki
Fine Chemicals And Polymers Research Laboratory Nof Corporation
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Nakamura T
Hokkaido Univ. Sapporo
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FUJIMORI Yoshikazu
Process Technology Div., ULSI Research and Development Headquarters, ROHM CO., LTD.
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NAKAMURA Takashi
Process Technology Div., ULSI Research and Development Headquarters, ROHM CO., LTD.
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KAMISAWA Akira
Process Technology Div., ULSI Research and Development Headquarters, ROHM CO., LTD.
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Kamisawa Akira
Process Technology Div. Semiconductor Research And Development Headquarters Rohm Co. Ltd.
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Nakamura Takashi
Rohm Co. Ltd.
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Nakamura T
National Defense Acad. Kanagawa Jpn
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NIKI Toshikazu
Ishikawa Seisakusho, Ltd.
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Nakamura Takanori
Functional Materials Research Dept. R & D Div. Murata Manufacturing Co. Ltd.
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Takasu H
R0hm Corp. Ltd. Kyoto Jpn
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Takasu Hidemi
Device Technology Div. Semiconductor Research And Development Headquarters Rohm Co. Ltd.
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FUJIMORI Yoshikazu
The authors are with the Process Technology Div. ULSI Research and Development Headquaters, ROHM CO.
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IZUMI Naoki
The authors are with the Process Technology Div. ULSI Research and Development Headquaters, ROHM CO.
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NAKAMURA Takashi
The authores are with the Process Technology Div. ULSI Research and Development Headquaters, ROHM CO
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KAMISAWA Akira
The authores are with the Process Technology Div. ULSI Research and Development Headquaters, ROHM CO
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FUJIMORI Yoshikazu
ROHM Co., Ltd.
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IZUMI Naoki
ROHM Co., Ltd.
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KAMISAWA Akira
ROHM Co., Ltd.
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Nakamura T
Department Of Earth And Ocean Sciences National Defense Academy
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Niki Toshikazu
Ishikawa Seisakusho Ltd.
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Fujimori Yoshikazu
Device Technology Div., Semiconductor R&D Headquarters, ROHM Co., Ltd.
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Nakamura Takashi
Device Technology Div., Semiconductor R&D Headquarters, ROHM Co., Ltd.
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Nakamura T
Sumitomo Electric Industries Ltd.
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SHIGEMATSU Yasuhiro
ROHM Co., Ltd.
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NAKAMURA Takashi
ULSI Process R&D Div., ROHM CO., LTD.
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FUJIMORI Yoshikazu
ULSI Process R&D Div., ROHM CO., LTD.
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IZUMI Naoki
ULSI Process R&D Div., ROHM CO., LTD.
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KAMISAWA Akira
ULSI Process R&D Div., ROHM CO., LTD.
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Nakamura Tetsuro
Materials And Structures Laboratory Tokyo Institute Of Technology
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TAKEDA Toshiyuki
Device Technology Div., Semiconductor Research and Development Headquarters, ROHM CO., LTD.
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Kamisawa Takashi
Process Technology Div., ULSI R&D Headquarters, ROHM CO., LTD.,
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Shigematsu Yasuhiro
Rohm Co. Ltd.
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Takeda Toshiyuki
Device Technology Div. Semiconductor Research And Development Headquarters Rohm Co. Ltd.
著作論文
- Properties of Ferroelectric Memory FET Using Sr_2(Ta,Nb)_2O_7 Thin Film
- Application of Sr_2Nb_2O_7 Family Ferroelectric Films for Ferroelectric Memory Field Effect Transistor
- Study of Ferroelectric Materials for Ferroelectric Memory FET(Special Issue on Advanced Memory Devices Using High-ε and Ferroelectric Films)
- Properties of Ferroelectric Memory with Ir System Materials as Electrodes(Special Issue on Advanced Memory Devices Using High-ε and Ferroelectric Films)
- Fabrication Technology of Ferroelectric Memories
- Development of Low Dielectric Constant Ferroelectric Materials for the Ferroelectric Memory Feild Effect Transistor
- Fabrication Technology of Ferroelectric Memories
- Low-Temperature Crystallization of Sol-Gel-Derived Pb (Zr, Ti)O_3 Thin Films
- Low Voltage Operation of the Ferroelectric Pb(Zr, Ti)O_3 Capacitors Derived by Sol-Gel Method
- Properties of Ferroelectric Memory FET Using Sr_2(Ta,Nb)_2O_7 Thin Film