Properties of Ferroelectric Memory FET Using Sr_2(Ta,Nb)_2O_7 Thin Film

概要

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Compounds of the Sr_2Nb_2O_7 (SNO) family are suitable for use as ferroelectric materials for ferroelectric memory field effect transistors (FETs), because these substances have a low dielectric constant, low coercive field and high heat resistance. C-V and I_D-V_G hysteresis curves which depend on ferroelectric polarization were obtained. These capacitors were applied to floating gate ferroelectric random access memory (FFRAM) cells. The degradation in the ferroelectricity of STN capacitors was not observed during the fabrication of FFRAM cells. We succeeded in operating FFRAM cells at a lower voltage than that required for PZT. Data retention characteristics of metal ferroelectric metal insulator semiconductor (MFMIS) structures with STN films were first measured to be up to 2 weeks. Data retention is close related to be the leakage current of the ferroelectric. The MFMIS FET has the potential to retain data for 10 years.
社団法人応用物理学会の論文
1999-04-30