FUJIMORI Yoshikazu | Process Technology Div., ULSI Research and Development Headquarters, ROHM CO., LTD.
スポンサーリンク
概要
関連著者
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Nakamura T
Hokkaido Univ. Sapporo Jpn
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中村 高遠
静大院理工
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Nakamura Tomohiko
The Institute Of Scientific And Industrial Research Osaka University
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FUJIMORI Yoshikazu
Process Technology Div., ULSI Research and Development Headquarters, ROHM CO., LTD.
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NAKAMURA Takashi
Process Technology Div., ULSI Research and Development Headquarters, ROHM CO., LTD.
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KAMISAWA Akira
Process Technology Div., ULSI Research and Development Headquarters, ROHM CO., LTD.
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Nakamura Takuya
The Faculty Of Engineering Saitama University
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Nakamura Tetsuro
School Of Electrical Engineering And Electronics Toyohashi University Of Technology
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Nakamura Toshihiko
Faculty Of Engineering Tokyo Institute Of Technology
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Kamisawa A
Process Technology Div. Ulsi R&d Headquarters Rohm Co. Ltd.
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Kamisawa Akira
Process Technology Div. Semiconductor Research And Development Headquarters Rohm Co. Ltd.
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Fujimori Y
Device Technology Div. Semiconductor Research And Development Headquarters Rohm Co. Ltd.
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Izumi Naoki
Process Technology Div. Ulsi R&d Headquarters Rohm Co. Ltd.
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Nakamura Tomoyuki
Fine Chemicals And Polymers Research Laboratory Nof Corporation
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Nakamura Tetsuro
Department Of Electrical Engineering And Electronics Toyohashi University Of Technology
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Nakamura T
Hokkaido Univ. Sapporo
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Nakamura T
Sumitomo Electric Industries Ltd.
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Nakamura Tetsuro
Materials And Structures Laboratory Tokyo Institute Of Technology
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Kamisawa Takashi
Process Technology Div., ULSI R&D Headquarters, ROHM CO., LTD.,
著作論文
- Properties of Ferroelectric Memory FET Using Sr_2(Ta,Nb)_2O_7 Thin Film
- Application of Sr_2Nb_2O_7 Family Ferroelectric Films for Ferroelectric Memory Field Effect Transistor
- Properties of Ferroelectric Memory FET Using Sr_2(Ta,Nb)_2O_7 Thin Film