Kamisawa A | Process Technology Div. Ulsi R&d Headquarters Rohm Co. Ltd.
スポンサーリンク
概要
関連著者
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Kamisawa A
Process Technology Div. Ulsi R&d Headquarters Rohm Co. Ltd.
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Nakamura Toshihiko
Faculty Of Engineering Tokyo Institute Of Technology
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Nakamura T
Hokkaido Univ. Sapporo Jpn
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Nakamura Tetsuro
Department Of Electrical Engineering And Electronics Toyohashi University Of Technology
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Nakamura Takuya
The Faculty Of Engineering Saitama University
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Nakamura Tetsuro
School Of Electrical Engineering And Electronics Toyohashi University Of Technology
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Nakamura Tomohiko
The Institute Of Scientific And Industrial Research Osaka University
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KAMISAWA Akira
ROHM Co., Ltd.
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Fujimori Y
Device Technology Div. Semiconductor Research And Development Headquarters Rohm Co. Ltd.
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Nakamura Takashi
Rohm Co. Ltd.
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Izumi Naoki
Process Technology Div. Ulsi R&d Headquarters Rohm Co. Ltd.
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中村 高遠
静大院理工
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Nakamura Tomoyuki
Fine Chemicals And Polymers Research Laboratory Nof Corporation
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Nakamura T
Hokkaido Univ. Sapporo
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NAKAO Yuichi
Rohm Co., Ltd.
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Nakao Y
Osaka Univ. Osaka Jpn
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SOYAMA Nobuyuki
Mitsubishi Materials Corporation, Development Section, Sanda Plant
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OGI Katsumi
Mitsubishi Materials Corporation, Central Research Institute
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Ogi K
Mitsubishi Materials Corporation Central Research Institute
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Soyama Nobuyuki
Mitsubishi Materials Corporation Development Section Sanda Plant
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Takasu Hidemi
Rohm Co. Ltd. Kyoto Jpn
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Takasu H
R0hm Corp. Ltd. Kyoto Jpn
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Takasu Hidemi
Device Technology Div. Semiconductor Research And Development Headquarters Rohm Co. Ltd.
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Takasu Hidemi
Rohm Co. Ltd.
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FUJIMORI Yoshikazu
Process Technology Div., ULSI Research and Development Headquarters, ROHM CO., LTD.
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NAKAMURA Takashi
Process Technology Div., ULSI Research and Development Headquarters, ROHM CO., LTD.
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KAMISAWA Akira
Process Technology Div., ULSI Research and Development Headquarters, ROHM CO., LTD.
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Kamisawa Akira
Process Technology Div. Semiconductor Research And Development Headquarters Rohm Co. Ltd.
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Atsuki T
Mitsubishi Materials Corporation Central Research Institute
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SAMESHIMA Katsumi
ROHM Co., Ltd.
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HOSHIBA Kazuhiro
ROHM Co., Ltd.
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Hoshiba Kazuhiro
Rohm Co. Ltd.
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Sameshima K
Rohm Co. Ltd. Kyoto Jpn
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FUJIMORI Yoshikazu
The authors are with the Process Technology Div. ULSI Research and Development Headquaters, ROHM CO.
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IZUMI Naoki
The authors are with the Process Technology Div. ULSI Research and Development Headquaters, ROHM CO.
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NAKAMURA Takashi
The authores are with the Process Technology Div. ULSI Research and Development Headquaters, ROHM CO
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KAMISAWA Akira
The authores are with the Process Technology Div. ULSI Research and Development Headquaters, ROHM CO
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FUJIMORI Yoshikazu
ROHM Co., Ltd.
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IZUMI Naoki
ROHM Co., Ltd.
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ABE Katsuya
Department of Physical Electronics, Tokyo Institute of Technology
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Abe K
Mitsubishi Materials Corporation Central Research Institute
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Nakamura T
Sumitomo Electric Industries Ltd.
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OGI Katsumi
Central Research Institute, Mitsubishi Materials Corporaltion
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SHIGEMATSU Yasuhiro
ROHM Co., Ltd.
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NAKAMURA Takashi
ULSI Process R&D Div., ROHM CO., LTD.
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FUJIMORI Yoshikazu
ULSI Process R&D Div., ROHM CO., LTD.
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IZUMI Naoki
ULSI Process R&D Div., ROHM CO., LTD.
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KAMISAWA Akira
ULSI Process R&D Div., ROHM CO., LTD.
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Sasaki Go
Central Research Institute Mitsubishi Materials Corporation
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Nakamura Tetsuro
Materials And Structures Laboratory Tokyo Institute Of Technology
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ATSUKI Tsutomu
Central Research Institute, Mitsubishi Material Corporation
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Atsuki Tsutomu
Central Research Institute Mitsubishi Materials Corporation
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Atsuki Tsutomu
Mitsubishi Materials Corporation, Central Research Institute
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ATSUKI Tsutomu
Metallurgy and New Material Division, Central Research Institute, Mitsubishi Materials Corporation
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SOYAMA Nobuyuki
Metallurgy and New Material Division, Central Research Institute, Mitsubishi Materials Corporation
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YONEZAWA Tadashi
Metallurgy and New Material Division, Central Research Institute, Mitsubishi Materials Corporation
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OGI Katsumi
Metallurgy and New Material Division, Central Research Institute, Mitsubishi Materials Corporation
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SASAKI Go
Metallurgy and New Material Division, Central Research Institute, Mitsubishi Materials Corporation
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SOYAMA Nobuyuki
Central Research Institute, Mitsubishi Materials Corporation
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Yonezawa T
Mitsubishi Materials Corp. Omiya Jpn
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ABE Kohji
Mitsubishi Materials Corporation, Central Research Institute
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Kamisawa Takashi
Process Technology Div., ULSI R&D Headquarters, ROHM CO., LTD.,
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Shigematsu Yasuhiro
Rohm Co. Ltd.
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Sasaki Go
Laboratory Of Cellular Neurobiology School Of Life Science Tokyo University Of Pharmacy And Life Sci
著作論文
- Properties of Ferroelectric Memory FET Using Sr_2(Ta,Nb)_2O_7 Thin Film
- Application of Sr_2Nb_2O_7 Family Ferroelectric Films for Ferroelectric Memory Field Effect Transistor
- Study of Ferroelectric Materials for Ferroelectric Memory FET(Special Issue on Advanced Memory Devices Using High-ε and Ferroelectric Films)
- Properties of Ferroelectric Memory with Ir System Materials as Electrodes(Special Issue on Advanced Memory Devices Using High-ε and Ferroelectric Films)
- Fabrication Technology of Ferroelectric Memories
- Development of Low Dielectric Constant Ferroelectric Materials for the Ferroelectric Memory Feild Effect Transistor
- Fabrication Technology of Ferroelectric Memories
- Study on Pb-Based Ferroelectric Thin Films Prepared by Sol-Gel Method for Memory Application ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Surface Morphology of Lead-Based Thin Films and Their Properties ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Preparation of Pb(Zr,Ti)O_3 Films on Pi/Ti/Ta Electrodes by Sol-Get Process
- Electrical Properties of Pb(Zr, Ti)O_3 Thin Film Capacitors on Pt and Ir Electrodes
- Preparation of Pb(Zr, Ti)O_3 Thin Films on Ir and IrO_2 Electrodes ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Micro-Patterning of PbZr_xTi_O_3 Thin Films Prepared by Photo Sensitive Sol-Get Solution
- Properties of Ferroelectric Memory FET Using Sr_2(Ta,Nb)_2O_7 Thin Film