SOYAMA Nobuyuki | Mitsubishi Materials Corporation, Development Section, Sanda Plant
スポンサーリンク
概要
関連著者
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SOYAMA Nobuyuki
Mitsubishi Materials Corporation, Development Section, Sanda Plant
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OGI Katsumi
Mitsubishi Materials Corporation, Central Research Institute
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Ogi K
Mitsubishi Materials Corporation Central Research Institute
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Soyama Nobuyuki
Mitsubishi Materials Corporation Development Section Sanda Plant
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Atsuki T
Mitsubishi Materials Corporation Central Research Institute
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KAMISAWA Akira
ROHM Co., Ltd.
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Kamisawa A
Process Technology Div. Ulsi R&d Headquarters Rohm Co. Ltd.
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NAKAO Yuichi
Rohm Co., Ltd.
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Nakao Y
Osaka Univ. Osaka Jpn
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Yonezawa T
Mitsubishi Materials Corp. Omiya Jpn
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Nakamura Takashi
Rohm Co. Ltd.
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Mori S
Mitsubishi Materials Corporation Development Section Sanda Plant
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Nakamura T
Hokkaido Univ. Sapporo Jpn
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Maki Kazunari
Mitsubishi Materials Corporation Development Section Sanda Plant
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OGI Katsumi
Central Research Institute, Mitsubishi Materials Corporaltion
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Sasaki Go
Central Research Institute Mitsubishi Materials Corporation
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Nakamura Tetsuro
Department Of Electrical Engineering And Electronics Toyohashi University Of Technology
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Nakamura Toshihiko
Faculty Of Engineering Tokyo Institute Of Technology
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Maki K
Mitsubishi Materials Corporation Development Section Sanda Plant
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ATSUKI Tsutomu
Metallurgy and New Material Division, Central Research Institute, Mitsubishi Materials Corporation
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SOYAMA Nobuyuki
Metallurgy and New Material Division, Central Research Institute, Mitsubishi Materials Corporation
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YONEZAWA Tadashi
Metallurgy and New Material Division, Central Research Institute, Mitsubishi Materials Corporation
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OGI Katsumi
Metallurgy and New Material Division, Central Research Institute, Mitsubishi Materials Corporation
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SAMESHIMA Katsumi
ROHM Co., Ltd.
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HOSHIBA Kazuhiro
ROHM Co., Ltd.
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Hoshiba Kazuhiro
Rohm Co. Ltd.
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Sasaki Go
Laboratory Of Cellular Neurobiology School Of Life Science Tokyo University Of Pharmacy And Life Sci
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Sameshima K
Rohm Co. Ltd. Kyoto Jpn
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MORI Satoru
Mitsubishi Materials Corporation, Development Section, Sanda Plant
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Mori Satoru
Mitsubishi Materials Corporation Development Section Sanda Plant
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ATSUKI Tsutomu
Central Research Institute, Mitsubishi Material Corporation
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Atsuki Tsutomu
Central Research Institute Mitsubishi Materials Corporation
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Atsuki Tsutomu
Mitsubishi Materials Corporation, Central Research Institute
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SASAKI Go
Metallurgy and New Material Division, Central Research Institute, Mitsubishi Materials Corporation
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SOYAMA Nobuyuki
Central Research Institute, Mitsubishi Materials Corporation
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ABE Katsuya
Department of Physical Electronics, Tokyo Institute of Technology
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Abe K
Mitsubishi Materials Corporation Central Research Institute
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NAGAMINE Kaoru
Mitsubishi Materials Corporation, Development Section, Sanda Plant
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SOYAMA Nobuyuki
Development Section, Sanda Plant, Mitsubishi Materials Corporation
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MAKI Kazunari
Development Section, Sanda Plant, Mitsubishi Materials Corporation
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MORI Satoru
Development Section, Sanda Plant, Mitsubishi Materials Corporation
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Takasu Hidemi
Rohm Co. Ltd. Kyoto Jpn
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Takasu H
R0hm Corp. Ltd. Kyoto Jpn
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Takasu Hidemi
Device Technology Div. Semiconductor Research And Development Headquarters Rohm Co. Ltd.
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Takasu Hidemi
Rohm Co. Ltd.
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DOI Hidekazu
Department of Information Science, Faculty of Science, Kanagawa University
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Kageyama Kensuke
Mitsubishi Materials Corporation Central Research Institute
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Doi Hidekazu
Department Of Information Science Faculty Of Science Kanagawa University
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Nagamine Kaoru
Mitsubishi Materials Corporation Development Section Sanda Plant
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YONEZAWA Tadashi
Central Research Institute, Mitsubishi Materials Corporation
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Uozumi Gakuji
Mitsubishi Materials Corporation, Central Research Institute
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Uchida Hiroto
Mitsubishi Materials Corporation, Central Research Institute
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Uozumi Gakuji
Mitsubishi Materials Corporation Central Research Institute
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Uchida Hiroto
Mitsubishi Materials Corporation Central Research Institute
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Yonezawa Tadashi
Central Research Institute Mitsubishi Materials Corporation
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ABE Kohji
Mitsubishi Materials Corporation, Central Research Institute
著作論文
- Low-Temperature Crystallization of Sol-Gel Derived Pb(Zr_,Ti_)O_3 Thin Films
- Preparation and Evaluation of Pb(Zr, Ti)O_3 Thin Films for Low Voltage Operation
- Evaluation of Pb(Zr, Ti)O_3 Films Derived from Propylene-Glycol-Based Sol-Gel Solutions
- Evaluation of Self-Patterned PbZr_xTi_O_3 Thin Film from Photosensitive Solution
- Preparation of Bi-Based Ferroelectric Thin Films by Sol-Gel Method
- Preparation of Dielectric Thin Films from Photosensitive Sol-Gel Solution ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Study on Pb-Based Ferroelectric Thin Films Prepared by Sol-Gel Method for Memory Application ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Surface Morphology of Lead-Based Thin Films and Their Properties ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Influence of Buffer Layers on Microstructural and Ferroelectric Characteristics of Sol-Gel Derived PbZr_xTiO_3 Thin Films ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Preparation of Pb(Zr,Ti)O_3 Films on Pi/Ti/Ta Electrodes by Sol-Get Process
- Micro-Patterning of PbZr_xTi_O_3 Thin Films Prepared by Photo Sensitive Sol-Get Solution