Surface Morphology of Lead-Based Thin Films and Their Properties (<Special Issue> FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1994-09-30
著者
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SOYAMA Nobuyuki
Mitsubishi Materials Corporation, Development Section, Sanda Plant
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OGI Katsumi
Mitsubishi Materials Corporation, Central Research Institute
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KAMISAWA Akira
ROHM Co., Ltd.
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Sasaki Go
Central Research Institute Mitsubishi Materials Corporation
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Ogi K
Mitsubishi Materials Corporation Central Research Institute
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Kamisawa A
Process Technology Div. Ulsi R&d Headquarters Rohm Co. Ltd.
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Atsuki T
Mitsubishi Materials Corporation Central Research Institute
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ATSUKI Tsutomu
Metallurgy and New Material Division, Central Research Institute, Mitsubishi Materials Corporation
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SOYAMA Nobuyuki
Metallurgy and New Material Division, Central Research Institute, Mitsubishi Materials Corporation
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YONEZAWA Tadashi
Metallurgy and New Material Division, Central Research Institute, Mitsubishi Materials Corporation
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OGI Katsumi
Metallurgy and New Material Division, Central Research Institute, Mitsubishi Materials Corporation
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SASAKI Go
Metallurgy and New Material Division, Central Research Institute, Mitsubishi Materials Corporation
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NAKAO Yuichi
Rohm Co., Ltd.
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SAMESHIMA Katsumi
ROHM Co., Ltd.
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HOSHIBA Kazuhiro
ROHM Co., Ltd.
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Soyama Nobuyuki
Mitsubishi Materials Corporation Development Section Sanda Plant
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Nakao Y
Osaka Univ. Osaka Jpn
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Yonezawa T
Mitsubishi Materials Corp. Omiya Jpn
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Hoshiba Kazuhiro
Rohm Co. Ltd.
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Sasaki Go
Laboratory Of Cellular Neurobiology School Of Life Science Tokyo University Of Pharmacy And Life Sci
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Sameshima K
Rohm Co. Ltd. Kyoto Jpn
関連論文
- Low-Temperature Crystallization of Sol-Gel Derived Pb(Zr_,Ti_)O_3 Thin Films
- Preparation and Evaluation of Pb(Zr, Ti)O_3 Thin Films for Low Voltage Operation
- Evaluation of Pb(Zr, Ti)O_3 Films Derived from Propylene-Glycol-Based Sol-Gel Solutions
- Photon-Stimulated Desorption Mechanism of Cl^+ Ions from Cl/Si(111) Surface
- Properties of Ferroelectric Memory FET Using Sr_2(Ta,Nb)_2O_7 Thin Film
- Application of Sr_2Nb_2O_7 Family Ferroelectric Films for Ferroelectric Memory Field Effect Transistor
- Study of Ferroelectric Materials for Ferroelectric Memory FET(Special Issue on Advanced Memory Devices Using High-ε and Ferroelectric Films)
- Properties of Ferroelectric Memory with Ir System Materials as Electrodes(Special Issue on Advanced Memory Devices Using High-ε and Ferroelectric Films)
- Fabrication Technology of Ferroelectric Memories
- Development of Low Dielectric Constant Ferroelectric Materials for the Ferroelectric Memory Feild Effect Transistor
- Fabrication Technology of Ferroelectric Memories
- New Low Temperature Processing of Sol-Gel SrBi_2Ta_2O_9 Thin Films
- Evaluation of Self-Patterned PbZr_xTi_O_3 Thin Film from Photosensitive Solution
- Preparation of Bi-Based Ferroelectric Thin Films by Sol-Gel Method
- Preparation of Dielectric Thin Films from Photosensitive Sol-Gel Solution ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Study on Pb-Based Ferroelectric Thin Films Prepared by Sol-Gel Method for Memory Application ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Surface Morphology of Lead-Based Thin Films and Their Properties ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Influence of Buffer Layers on Microstructural and Ferroelectric Characteristics of Sol-Gel Derived PbZr_xTiO_3 Thin Films ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Preparation of Pb(Zr,Ti)O_3 Films on Pi/Ti/Ta Electrodes by Sol-Get Process
- Electrical Properties of Pb(Zr, Ti)O_3 Thin Film Capacitors on Pt and Ir Electrodes
- Preparation of Pb(Zr, Ti)O_3 Thin Films on Ir and IrO_2 Electrodes ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Micro-Patterning of PbZr_xTi_O_3 Thin Films Prepared by Photo Sensitive Sol-Get Solution
- Properties of Ferroelectric Memory FET Using Sr_2(Ta,Nb)_2O_7 Thin Film