Properties of Ferroelectric Memory with Ir System Materials as Electrodes(Special Issue on Advanced Memory Devices Using High-ε and Ferroelectric Films)

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Pb(Zr_χTi_1-χ)O_3(PZT) thin films were prepared on various electrodes.When Ir system materials were used as electrodes, fatigue properties of PZT thin films were improved.Moreover, in the case of the PZT thin film on an Ir/IrO_2 electrode, not only fatigue but imprint properties were clearly improved.We could find these improvements were caused by good barrier effect of IrO_2 from secondary ion mass spectroscopy (SIMS) analysis.By applying these Ir system electrodes, we fabricated stacked capacitors on polycrystalline silicon (poly-Si) plugs.In spite of high temperature thermal processing, we found poly-Si plugs were ohmically connected with the bottom electrodes of the capacitors from hysteresis measurements and I-V characteristics, and could greatly expect them for practical use.
社団法人電子情報通信学会の論文
1998-04-25