Temperature dependence of band gap energies of GaAsN alloys
スポンサーリンク
概要
- 論文の詳細を見る
The temperature dependence of band gap energies of GaAsN alloys was studied with absorption measurements. As the N concentration in GaAsN increased, the temperature dependence of the band gap energy was clearly reduced in comparison with that of GaAs. The redshift of the absorption edge in GaAsN for the temperature increase from 25 to 297 K was reduced to 60% of that of GaAs for the N concentration larger than ~1%. The differential temperature coefficient of the energy gap at room temperature was also reduced to 70% of that of GaAs. The main factor for this reduced temperature dependence in GaAsN was attributed to the transition from band-like states to nitrogen-related localized states with detailed studies of the temperature-induced shift of the absorption edge.
- American Institute of Physicsの論文
- 2000-03-06
著者
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Nakamura T
Waseda Univ. Tokyo Jpn
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中村 龍史
Department Of Applied Physics Waseda University
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Nakamura T
Hokkaido Univ. Sapporo Jpn
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中村 高遠
静大院理工
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Nakamura T
Sumitomo Electric Industries Ltd.
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Nakamura Tomoyuki
Fine Chemicals And Polymers Research Laboratory Nof Corporation
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Hasegawa Toshihide
Department Of Applied Chemistry Graduate School Of Engineering Osaka Prefecture University
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Nakamura Takuya
The Faculty Of Engineering Saitama University
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Nakamura Tetsuro
Materials And Structures Laboratory Tokyo Institute Of Technology
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Nakamura Tetsuro
School Of Electrical Engineering And Electronics Toyohashi University Of Technology
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Nakamura Tetsuro
Department Of Electrical Engineering And Electronics Toyohashi University Of Technology
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Nakamura Toshikazu
Department Of Chemistry Faculty Of Science Kyoto University
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Nakamura Toshihiko
Faculty Of Engineering Tokyo Institute Of Technology
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Nakayashiki Takashi
Department Of Molecular Engineering Graduate School Of Engineering Kyoto University
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Nakamura T
Hokkaido Univ. Sapporo
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Hasegawa T
Research Institute Of Electronic Science Hokkaido University
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Akutagawa T
Graduate School Of Environmental Science Hokkaido University
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