FUJIMORI Yoshikazu | The authors are with the Process Technology Div. ULSI Research and Development Headquaters, ROHM CO.

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概要

• 同名の論文著者
• The authors are with the Process Technology Div. ULSI Research and Development Headquaters, ROHM CO.の論文著者

関連著者

• Izumi Naoki

  Process Technology Div. Ulsi R&d Headquarters Rohm Co. Ltd.

• Nakamura T

  Hokkaido Univ. Sapporo Jpn

• 中村 高遠

  静大院理工

• Nakamura Tomohiko

  The Institute Of Scientific And Industrial Research Osaka University

• Nakamura Tomoyuki

  Fine Chemicals And Polymers Research Laboratory Nof Corporation

• FUJIMORI Yoshikazu

  The authors are with the Process Technology Div. ULSI Research and Development Headquaters, ROHM CO.

• IZUMI Naoki

  The authors are with the Process Technology Div. ULSI Research and Development Headquaters, ROHM CO.

• NAKAMURA Takashi

  The authores are with the Process Technology Div. ULSI Research and Development Headquaters, ROHM CO

• KAMISAWA Akira

  The authores are with the Process Technology Div. ULSI Research and Development Headquaters, ROHM CO

• Nakamura Takuya

  The Faculty Of Engineering Saitama University

• Nakamura Tetsuro

  School Of Electrical Engineering And Electronics Toyohashi University Of Technology

• Nakamura Tetsuro

  Department Of Electrical Engineering And Electronics Toyohashi University Of Technology

• Nakamura Toshihiko

  Faculty Of Engineering Tokyo Institute Of Technology

• Nakamura T

  Hokkaido Univ. Sapporo

• Kamisawa A

  Process Technology Div. Ulsi R&d Headquarters Rohm Co. Ltd.

• Fujimori Y

  Device Technology Div. Semiconductor Research And Development Headquarters Rohm Co. Ltd.

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著作論文

• Study of Ferroelectric Materials for Ferroelectric Memory FET(Special Issue on Advanced Memory Devices Using High-ε and Ferroelectric Films)
• Properties of Ferroelectric Memory with Ir System Materials as Electrodes(Special Issue on Advanced Memory Devices Using High-ε and Ferroelectric Films)

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