New Low Temperature Processing of Sol-Gel SrBi_2Ta_2O_9 Thin Films
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1996-09-30
著者
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Ito Yasuyuki
Functional Devices Laboratories Sharp Corporation
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OGI Katsumi
Mitsubishi Materials Corporation, Central Research Institute
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OGI Katsumi
Central Research Institute, Mitsubishi Materials Corporaltion
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Ogi K
Mitsubishi Materials Corporation Central Research Institute
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Yokoyama Seiichi
Functional Devices Laboratories, SHARP Corporation
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YONEZAWA Tadashi
Central Research Institute, Mitsubishi Materials Corporation
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Yokoyama Seiichi
Functional Devices Laboratories Sharp Corporation
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USHIKUBO Maho
Functional Devices Laboratories, Sharp Corporation
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MATSUNAGA Hironori
Functional Devices Laboratories, Sharp Corporation
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ATSUKI Tsutomu
Central Research Institute, Mitsubishi Material Corporation
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Ushikubo Maho
Functional Devices Laboratories Sharp Corporation
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Atsuki T
Mitsubishi Materials Corporation Central Research Institute
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Atsuki Tsutomu
Central Research Institute Mitsubishi Materials Corporation
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Yonezawa T
Mitsubishi Materials Corp. Omiya Jpn
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Matsunaga Hironori
Functional Devices Laboratories Sharp Corporation
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Yonezawa Tadashi
Central Research Institute Mitsubishi Materials Corporation
関連論文
- Low-Temperature Crystallization of Sol-Gel Derived Pb(Zr_,Ti_)O_3 Thin Films
- Preparation and Evaluation of Pb(Zr, Ti)O_3 Thin Films for Low Voltage Operation
- Evaluation of Pb(Zr, Ti)O_3 Films Derived from Propylene-Glycol-Based Sol-Gel Solutions
- Photon-Stimulated Desorption Mechanism of Cl^+ Ions from Cl/Si(111) Surface
- High-Temperature Etching of PZT/Pt/TiN Structure by High-Density ECR Plasma
- Ultrasonic Properties of Lead Zirconate Titanate Thin Films in UHF-SHF Range
- New Low Temperature Processing of Sol-Gel SrBi_2Ta_2O_9 Thin Films
- New Low-Temperature Processing of Metalorganic Chemical Vapor Deposition-Bi_4Ti_3O_ Thin Films Using BiO_x Buffer Layer
- New Low Temperature Processing of MOCVD-Bi_4Ti_3O_ Thin Films Using BiO_x Buffer Layer
- Influence of Buffer Layers and Excess Pb/Zr+Ti Ratios on Fatigue Characteristics of Sol-Gel-Derived Pb(Zr, Ti)O_3 Thin Films
- Evaluation of Self-Patterned PbZr_xTi_O_3 Thin Film from Photosensitive Solution
- Preparation of Bi-Based Ferroelectric Thin Films by Sol-Gel Method
- Preparation of Dielectric Thin Films from Photosensitive Sol-Gel Solution ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Study on Pb-Based Ferroelectric Thin Films Prepared by Sol-Gel Method for Memory Application ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Surface Morphology of Lead-Based Thin Films and Their Properties ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Influence of Buffer Layers on Microstructural and Ferroelectric Characteristics of Sol-Gel Derived PbZr_xTiO_3 Thin Films ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Preparation of Pb(Zr,Ti)O_3 Films on Pi/Ti/Ta Electrodes by Sol-Get Process
- Fine-Grained SrBi_2Ta_2O_9 Thin Films by Low Temperature Annealing
- Ultra-Thin Fatigue-Free Bi_4Ti_3O_ Films for Nonvolatile Ferroelectric Memories
- Micro-Patterning of PbZr_xTi_O_3 Thin Films Prepared by Photo Sensitive Sol-Get Solution
- Preparation of Bi_4Ti_3O_ Thin Films by MOCVD Method and Electrical Properties of MFIS Structure
- Preparation of Bi_4Ti_3O_ Thin Films by MOCVD Method and Electrical Properties of Metal/Ferroelectric/Insulator/Semiconductor Structure
- Preparation of Bi_4Ti_3O_ Thin Film on Si(100) Substrate Using Bi_2SiO_5 Buffer Layer and Its Electric Characterization