Preparation of Bi_4Ti_3O_<12> Thin Films by MOCVD Method and Electrical Properties of MFIS Structure

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概要

• 論文の詳細を見る
• 1998-09-07

著者

• Kijima Takeshi

  Functional Devices Laboratories Sharp Corporation

• MATSUNAGA Hironori

  Functional Devices Laboratories, Sharp Corporation

• Matsunaga Hironori

  Functional Devices Laboratories Sharp Corporation

関連論文

• New Low Temperature Processing of Sol-Gel SrBi_2Ta_2O_9 Thin Films
• New Low-Temperature Processing of Metalorganic Chemical Vapor Deposition-Bi_4Ti_3O_ Thin Films Using BiO_x Buffer Layer
• New Low Temperature Processing of MOCVD-Bi_4Ti_3O_ Thin Films Using BiO_x Buffer Layer
• Ultra-Thin Fatigue-Free Bi_4Ti_3O_ Films for Nonvolatile Ferroelectric Memories
• Preparation of Bi_4Ti_3O_ Thin Films by MOCVD Method and Electrical Properties of MFIS Structure
• Preparation of Bi_4Ti_3O_ Thin Films by MOCVD Method and Electrical Properties of Metal/Ferroelectric/Insulator/Semiconductor Structure
• Preparation of Bi_4Ti_3O_ Thin Film on Si(100) Substrate Using Bi_2SiO_5 Buffer Layer and Its Electric Characterization

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