Ultra-Thin Fatigue-Free Bi_4Ti_3O_<12> Films for Nonvolatile Ferroelectric Memories

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概要

• 論文の詳細を見る
• 1996-02-01

著者

• Koba Masayoshi

  Functional Devices Laboratory Sharp Corporation

• Kijima T

  R&d Association For Future Electron Devices

• Kijima Takeshi

  Functional Devices Laboratories Sharp Corporation

• MATSUNAGA Hironori

  Functional Devices Laboratories, Sharp Corporation

• SATOH Sakiko

  Functional Devices Laboratory, SHARP Corporation

• Sato S

  Akita Univ. Akita Jpn

• Matsunaga H

  Assoc. Of Super-advanced Electronics Technol. (aset) Kanagawa Jpn

• Matsunaga Hironori

  Functional Devices Laboratories Sharp Corporation

関連論文

• Study of Ag Addition to YBa_2Cu_3O_ Films Prepared using Electrophoretic Deposition
• New Low Temperature Processing of Sol-Gel SrBi_2Ta_2O_9 Thin Films
• New Low-Temperature Processing of Metalorganic Chemical Vapor Deposition-Bi_4Ti_3O_ Thin Films Using BiO_x Buffer Layer
• New Low Temperature Processing of MOCVD-Bi_4Ti_3O_ Thin Films Using BiO_x Buffer Layer
• Ultra-Thin Fatigue-Free Bi_4Ti_3O_ Films for Nonvolatile Ferroelectric Memories
• Preparation of Bi_4Ti_3O_ Thin Films by MOCVD Method and Electrical Properties of MFIS Structure
• Preparation of Bi_4Ti_3O_ Thin Films by MOCVD Method and Electrical Properties of Metal/Ferroelectric/Insulator/Semiconductor Structure
• Preparation of Bi_4Ti_3O_ Thin Film on Si(100) Substrate Using Bi_2SiO_5 Buffer Layer and Its Electric Characterization

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