Preparation of Bi_4Ti_3O_<12> Thin Films by MOCVD Method and Electrical Properties of Metal/Ferroelectric/Insulator/Semiconductor Structure
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概要
- 論文の詳細を見る
Pt/Bi_4Ti_3O_<12>(001)/Bi_2SiO_5(100)/Si(100) structures have been fabricated by the metalorganic chemical vapor deposition (MOCVD) at 500°. Bi_2SiO_5 film is used as a buffer layer to grow ferroelectric Bi_4Ti_3O_<12> films because of its relatively high dielectric constant (ε= 30). The memory window has a C-V characteristic of about 0.8 V, and the retention time estimated by the zero-bias capacitance for the Pt/100-nm-Bi_4Ti_3O_<12>/30-nm-Bi_2SiO_5/Si/Al structure is more than 11 days.
- 社団法人応用物理学会の論文
- 1999-04-30
著者
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Kijima Takeshi
Functional Devices Laboratories Sharp Corporation
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Matsunaga Hironori
Functional Devices Laboratories Sharp Corporation
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- Ultra-Thin Fatigue-Free Bi_4Ti_3O_ Films for Nonvolatile Ferroelectric Memories
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- Preparation of Bi_4Ti_3O_ Thin Films by MOCVD Method and Electrical Properties of Metal/Ferroelectric/Insulator/Semiconductor Structure
- Preparation of Bi_4Ti_3O_ Thin Film on Si(100) Substrate Using Bi_2SiO_5 Buffer Layer and Its Electric Characterization