New Low Temperature Processing of MOCVD-Bi_4Ti_3O_<12> Thin Films Using BiO_x Buffer Layer
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概要
- 論文の詳細を見る
- 1997-09-16
著者
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KIJIMA Takeshi
Technology Platform Research Center, SEIKO EPSON CORPORATION
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Kijima T
Functional Devices Laboratories Sharp Corporation
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Kijima Takeshi
Technology Platform Research Center Seiko Epson Corporation
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Kijima Takeshi
Functional Devices Laboratories Sharp Corporation
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USHIKUBO Maho
Functional Devices Laboratories, Sharp Corporation
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MATSUNAGA Hironori
Functional Devices Laboratories, Sharp Corporation
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Ushikubo M
Functional Devices Laboratories Sharp Corporation
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Ushikubo Maho
Functional Devices Laboratories Sharp Corporation
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Matsunaga H
Assoc. Super‐advanced Electronics Technol. (aset) Kanagawa Jpn
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Matsunaga Hironori
Functional Devices Laboratories Sharp Corporation
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Kijima Takeshi
Functional Devices Laboratories Sharp Corporaton
関連論文
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- New Low Temperature Processing of Sol-Gel SrBi_2Ta_2O_9 Thin Films
- New Low-Temperature Processing of Metalorganic Chemical Vapor Deposition-Bi_4Ti_3O_ Thin Films Using BiO_x Buffer Layer
- New Low Temperature Processing of MOCVD-Bi_4Ti_3O_ Thin Films Using BiO_x Buffer Layer
- Ultra-Thin Fatigue-Free Bi_4Ti_3O_ Films for Nonvolatile Ferroelectric Memories
- Fabrication and Characterization of Pt/(Bi, La)_4Ti_3O_/Si_3N_4/Si Metal Ferroelectric Insulator Semiconductor Structure for FET-Type Ferroelectric Memory Applications
- Fabrication and Characterization of Pt/(Bi, La)_4Ti_3O_/Si_3N_4/Si MFIS Structure for FET-Type Ferroelectric Memory Applications
- Preparation of Bi_4Ti_3O_ Thin Films by MOCVD Method and Electrical Properties of MFIS Structure
- Preparation of Bi_4Ti_3O_ Thin Films by MOCVD Method and Electrical Properties of Metal/Ferroelectric/Insulator/Semiconductor Structure
- Preparation of Bi_4Ti_3O_ Thin Film on Si(100) Substrate Using Bi_2SiO_5 Buffer Layer and Its Electric Characterization
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