Evaluation of Ultratrace Metallic Impurities in Thin Copper Layers, Barrier Metals and Silicon Wafers for Copper Metallization Technology

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概要

• 論文の詳細を見る

• An analytical method for the determination of ultratrace concentrations of metals in several semiconductor-related materials for copper metallization technology such as thin Cu layers, barrier metals and silicon wafers has been developed, Using this method, the concentration of Cu impurities in Si wafers resulting from diffusion of Cu from Cu metallization layers through barrier layers of TiN, TiSiN, or WSiN was found to be less than 10^<12> atoms/cm^3.

• 社団法人応用物理学会の論文
• 1996-12-15

著者

• Hayashi M

  Nec Kansai Ltd. Otsu Jpn

• Takenaka Miyuki

  Laboratory Of Nutrition Chemistry Division Of Bioscience And Biotechnology Faculty Of Agriculture Gr

• Matsunaga H

  Assoc. Super‐advanced Electronics Technol. (aset) Kanagawa Jpn

• Kozuka Shoji

  Environmental Engineering Laboratory Research And Development Center Toshiba Corporation Komukai-tos

• TAKENAKA Miyuki

  Research and Development Center, Toshiba Corporation

• TACHIBE Tetsuya

  Research and Development Center, Toshiba Corporation

• KOZUKA Shoji

  Research and Development Center, Toshiba Corporation

• HAYASHI Masaru

  Research and Development Center, Toshiba Corporation

• MATSUNAGA Hideki

  Research and Development Center, Toshiba Corporation

• Tachibe Tetsuya

  Research And Development Center Toshiba Corporation

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• Evaluation of Ultratrace Metallic Impurities in Thin Copper Layers, Barrier Metals and Silicon Wafers for Copper Metallization Technology

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