Abe K | Mitsubishi Materials Corporation Central Research Institute
スポンサーリンク
概要
関連著者
-
ABE Katsuya
Department of Physical Electronics, Tokyo Institute of Technology
-
Abe K
Mitsubishi Materials Corporation Central Research Institute
-
Abe Katsuya
Department Of Applied Chemistry Faculty Of Engineering Kogakuin University
-
Konagai M
Department Of Physical Electronics Tokyo Institute Of Technology
-
Konagai Makoto
Department Of Electrical & Electronic Engineering Tokyo Institute Of Technology
-
山田 晃
東京農工大学生物システム応用科学府
-
KONAGAI Makoto
Department of Physical Electronics, Tokyo Institute of Technology
-
Yamada Akira
Department Of Cardiology Aso-iizuka Hospital
-
Konagai Makoto
Department Of Electrical And Electronic Engineering. Tokyo Institute Of Technology
-
YAMADA Akira
Departments of Immunology, Kurume University School of Medicine
-
山田 明
東京工業大学大学院理工学研究科電子物理工学専攻
-
YAGI Shuhei
Department of Physical Electronics, Tokyo Institute of Technology
-
Yagi S
Department Of Physical Electronics Tokyo Institute Of Technology
-
Konagai M
Tokyo Inst. Technol. Tokyo Jpn
-
Yagi Syuhei
Department Of Physical Electronics Tokyo Institute Of Technology
-
Yagi Shin-ichi
Department Of Physical Electronics Tokyo Institute Of Technology
-
Yagi S
Meisei Univ. Tokyo Jpn
-
山田 晃
農工大院
-
OKABAYASHI Takashi
Department of Physical Electronics, Tokyo Institute of Technology
-
KONAGAI Makoto
Tokyo Institute of Technology
-
Yagi Shuhei
Department Of Physical Electronics Tokyo Institute Of Technology
-
山田 晃
東京農工大学生物システム応用科学研究科
-
Oshima Takayuki
Department Of Physical Electronics Tokyo Institute Of Technology
-
Okabayashi Takashi
Department Of Physical Electronics Tokyo Institute Of Technology
-
WATAHIKI Tatsuro
Department of Physical Electronics, Tokyo Institute of Technology
-
Yamada Akira
Frontier Research Program The Institute Of Physical And Chemical Research (riken)
-
Watahiki Tatsuro
Department Of Physical Electronics Tokyo Institute Of Technology
-
Watahiki Tatsuro
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
-
Nakamura Takashi
Rohm Co. Ltd.
-
YAMADA Akira
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
-
YONEYAMA Yuichi
Department of Physical Electronics, Tokyo Institute of Technology
-
YAGI Syuhei
Department of Physical Electronics, Tokyo Institute of Technology
-
Nakamura T
Hokkaido Univ. Sapporo Jpn
-
SOYAMA Nobuyuki
Mitsubishi Materials Corporation, Development Section, Sanda Plant
-
OGI Katsumi
Mitsubishi Materials Corporation, Central Research Institute
-
KAMISAWA Akira
ROHM Co., Ltd.
-
Nakamura Tetsuro
Department Of Electrical Engineering And Electronics Toyohashi University Of Technology
-
Nakamura Toshihiko
Faculty Of Engineering Tokyo Institute Of Technology
-
Ogi K
Mitsubishi Materials Corporation Central Research Institute
-
Kamisawa A
Process Technology Div. Ulsi R&d Headquarters Rohm Co. Ltd.
-
Yoneyama Yuichi
Department Of Physical Electronics Tokyo Institute Of Technology
-
NAKAO Yuichi
Rohm Co., Ltd.
-
SAMESHIMA Katsumi
ROHM Co., Ltd.
-
HOSHIBA Kazuhiro
ROHM Co., Ltd.
-
Soyama Nobuyuki
Mitsubishi Materials Corporation Development Section Sanda Plant
-
Nakao Y
Osaka Univ. Osaka Jpn
-
Hoshiba Kazuhiro
Rohm Co. Ltd.
-
ABE Kohji
Mitsubishi Materials Corporation, Central Research Institute
-
Sameshima K
Rohm Co. Ltd. Kyoto Jpn
-
Yamada Akira
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
著作論文
- Phosphorous Doping of Strain-Induced Si_C_y Epitaxial Films Grown by Low-Temperature Chemical Vapor Deposition
- P-Doping into Strain-Induced Si_C_y Epitaxial Films Grown by Low Temperature Chemical Vapor Deposition
- Epitaxial Growth of Si_C_y Film by Low Temperature Chemical vapor Deposition
- Characterization of Tensile Strained Si_1_yCy Alloy Grown by Photo- and Plasma Chemical Vapor Deposition at Very Low Temperature
- Growth Mechanism during Silicon Epitaxy by Photochemical Vapor Deposition at Low Temperatures
- Characterization of Hydrogen in Epitaxial Silicon Films Grown at Very Low Temperatures
- Micro-Patterning of PbZr_xTi_O_3 Thin Films Prepared by Photo Sensitive Sol-Get Solution
- Characterization of Hydrogen in Epitaxial Si Films Grown at Very Low Temperature