Konagai Makoto | Department Of Electrical & Electronic Engineering Tokyo Institute Of Technology
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概要
関連著者
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KONAGAI Makoto
Department of Physical Electronics, Tokyo Institute of Technology
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Yamada Akira
Department Of Cardiology Aso-iizuka Hospital
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山田 晃
東京農工大学生物システム応用科学府
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YAMADA Akira
Departments of Immunology, Kurume University School of Medicine
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Konagai Makoto
Department Of Electrical And Electronic Engineering. Tokyo Institute Of Technology
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Konagai M
Department Of Physical Electronics Tokyo Institute Of Technology
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TAKAHASHI Kiyoshi
Department of Medicine, National Minami-Okayama Hospital
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Takahashi Kiyoshi
Department Of Internal Medicine Ii Okayama University Graduate School Of Medicine And Dentistry
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KONAGAI Makoto
Tokyo Institute of Technology
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Takahashi K
Tokyo Inst. Technol. Yokohama Jpn
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Takahashi Kouchiro
National Institute For Research In Inorganic Materials
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山田 明
東京工業大学大学院理工学研究科電子物理工学専攻
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Takahashi K
Department Of Physical Electronics Tokyo Institute Of Technology
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山田 晃
東京農工大学生物システム応用科学研究科
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Takahashi K
National Inst. Res. In Inorganic Materials Ibaraki Jpn
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Konagai M
Tokyo Inst. Technol. Tokyo Jpn
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Takahashi K
Department Of Physical Electronics Tokyo Institute Of Tecnology
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Takahashi Kuniharu
Graduate School Of Science And Technology Niigata University
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Ohtsuka Tomohiko
Department Of Physical Electronics Tokyo Institute Of Technology
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Abe Katsuya
Department Of Applied Chemistry Faculty Of Engineering Kogakuin University
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Okamoto T
Keio Univ. Yokohama Jpn
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OKAMOTO Tamotsu
Tokyo Institute of Technology
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Okamoto Toshiyuki
Department Of Applied Science Faculty Of Engineering Kyushu University:(present Address)alps Denki C
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山田 晃
農工大院
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ABE Katsuya
Department of Physical Electronics, Tokyo Institute of Technology
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Yamada Akira
Frontier Research Program The Institute Of Physical And Chemical Research (riken)
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OKAMOTO Tamotsu
Department of Physical Electronics, Tokyo Institute of Technology
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Yamada Takumi
Department of Cardiology, Nagoya University Graduate School of Medicine
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Yamada T
Tokyo Inst. Technol. Tokyo Jpn
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Abe K
Mitsubishi Materials Corporation Central Research Institute
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TOKUMITSU Eisuke
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Okamoto Tamotsu
Department Of Electrical And Electronics Engineering Chiba University
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Miura Naruhisa
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Oshima Takayuki
Department Of Physical Electronics Tokyo Institute Of Technology
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CHAISITSAK Sutichai
Department of Physical Electronics, Tokyo Institute of Technology
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OKAMOTO Tamotsu
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Yamada T
Tokai Univ. Hiratsuka Jpn
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Sang Baosheng
Department of Electrical & Electric Engineering, Tokyo Institute of Technology
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Miura N
Department Of Materials Science And Technology Graduate School Of Engineering Sciences Kyushu Univer
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Yamada T
Tokyo Inst. Of Technol. Tokyo Jpn
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SAITO Koki
Department of Electronics and Information Science, Teikyo University of Science and Technology
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Sato K
Depertment Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Yagi Shuhei
Department Of Physical Electronics Tokyo Institute Of Technology
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Yamada T
Daido Inst. Technol. Nagoya Jpn
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Yamada T
Sophia Univ. Tokyo Jpn
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Sato Kuninori
Institute For Fusion Science
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Sato K
Department Of Electronics And Information Science Teikyo University Of Science And Technology
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YAGI Shuhei
Department of Physical Electronics, Tokyo Institute of Technology
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YAMADA Akira
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Dairiki Koji
Department of Electrical & Electric Engineering, Tokyo Institute of Technology
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Wenas Wilson
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Yagi S
Department Of Physical Electronics Tokyo Institute Of Technology
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Saito K
Department Of Materials Technology Chiba University
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Yagi Syuhei
Department Of Physical Electronics Tokyo Institute Of Technology
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NOZAKI Shinji
Department of Physical Electronics, Tokyo Institute of Technology
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JIA Ying
Department of Physical Electronics, Tokyo Institute of Technology O-okayama
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OSHIMA Takayuki
Department of Physical Electronics, Tokyo Institute of Technology O-okayama
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Yamanaka Satoshi
Department Of Cardiovascular Medicine Kyoto Prefectural University Of Medicine
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YAMADA Akira
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology
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AMIN Nowshad
Department of Electrical and Electronic Engineering. Tokyo Institute of Technology
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OKABAYASHI Takashi
Department of Physical Electronics, Tokyo Institute of Technology
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ICHIKAWA Mitsuru
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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SHIMIZU Akira
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Yamada Akira
Biological Ict Group National Institute Of Information And Communications Technology
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BUDIMAN Maman
Department of Electrical & Electronic Engineering, Tokyo Institute of Technology
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OHTAKE Yasutoshi
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Konagai Makoto
Department Of Physical Electronics Tokyo Institute Of Technology
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Fujiwara Kozo
Institute For Materials Research (imr) Tohoku University
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JIA Ying
School of Pharmacy, Shenyang Pharmaceutical University
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Hayakawa Yasuhiro
Research Institute Of Electronics Shizuoka University
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Tanda M
Fuji Electric Advanced Technol. Co. Ltd. Kanagawa Jpn
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TANDA Masayuki
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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SHIRAKASHI Jun-ichi
Department of Electrical and Electronic System Engineering, Tokyo University of Agriculture and Tech
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Kojima N
Department Of Chemistry Faculty Of Science Kyoto University
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KUSHIYA Katsumi
Showa Shell Sekiyu K.K. Central R&D Lab.
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KOJIMA Nobuaki
Department of Physical Electronics, Tokyo Institute of Technology
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Ishida M
Sii Nanotechnology Inc.
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TABUCHI Katsuya
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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山田 晃
東京農工大学大学院生物システム応用科学研究科
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Ichikawa Masakazu
Joint Research Center For Atom Technology Angstrom Technology Partnership
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Ichikawa Masakazu
Joint Research Center For Atom Technology Angstrom Technology Partnership (jrcat-atp) C
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Ichikawa Mitsuru
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Miyazaki Hisashi
Department Of Applied Physics Osaka City University
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MIYAJIMA Shinsuke
Department of Physical Electronics, Tokyo Institute of Technology
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WATAHIKI Tatsuro
Department of Physical Electronics, Tokyo Institute of Technology
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OHTSUKA Tomohiko
Department of Physical Electronics, Tokyo Institute of Technology
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SUGIYAMA Takeshi
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Dairiki Koji
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Nagao K
Univ. Tokyo Tokyo Jpn
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TAKAHASHI Kaoru
Department of Applied Physics, Tokyo University of Agriculture and Technology
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MANAKA Susumu
Department of Physical Electronics, Tokyo Institute of Technology
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KUSHIYA Katsumi
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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SANO Hideki
Department of Physical Electronics, Tokyo Institute of Technology
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YAMANAKA Satoshi
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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SHIRAKASHI Jun-ichi
Electrical and Electronic System Engineering, Tokyo University of Agriculture and Technology
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NAGAO Keisuke
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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SHIRAHAMA Masanori
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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QI Ming
Department of Physical Electronics, Tokyo Institute of Technology
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MIYAKE Ryuji
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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AKATSUKA Takeshi
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Matsuzaki Yuichi
Department Of Agricultural And Environmental Biology The University Of Tokyo
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YOSHINO Masahiro
Technical Research Department, YKK Corporation
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Nagao Keisuke
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Yamanaka Satoshi
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Takahashi Kensuke
Department Of Electrical And Electronic Engineering Musashi Institute Of Technology
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Ichikawa Masakazu
Joint Research Center For Atom Technology
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Takahashi Kazuhiko
National Research Institute For Metals Tsukuba Laboratories:sanyo Elect. Co. Ltd.
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Watahiki Tatsuro
Department Of Physical Electronics Tokyo Institute Of Technology
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Lim K
Korea Advanced Inst. Sci. And Technol. Taejon Kor
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Nagao Keisuke
Department Of Applied Physics Faculty Of Science Okayama University Of Science
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KUROKAWA Yasuyoshi
Department of Physical Electronics, Tokyo Institute of Technology
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Sakai Yoshio
Department Of Applied Physics Science University Of Tokyo
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TOKITA Yuuki
Department of Physical Electronics, Tokyo Institute of Technology
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MIYAZAKI Hisashi
Department of Physical Electronics, Tokyo Institute of Technology
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MIKAMI Rui
Department of Physical Electronics, Tokyo Institute of Technology
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YONEYAMA Yuichi
Department of Physical Electronics, Tokyo Institute of Technology
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NAKANISHI Kazuyuki
Department of Physical Electronics, Tokyo Institute of Technology
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JAHN Uwe
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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YAGI Syuhei
Department of Physical Electronics, Tokyo Institute of Technology
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KUDRIAVTSV Yuriy
Electrical Engineering Department, Center for Research and Advanced Studies
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GODINES Antonio
Electrical Engineering Department, Center for Research and Advanced Studies
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VILLEGAS Antonio
Electrical Engineering Department, Center for Research and Advanced Studies
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ASOMOZA Rene
Electrical Engineering Department, Center for Research and Advanced Studies
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TSUSIMA Takeshi
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Kim Woo
Department of Obstetrics and Gynecology, Samsung Medical Center, Sungkyunkwan University School of M
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Maruyama Seitaro
First Department Of Internal Medicine Niigata University School Of Medicine
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Kobayashi Masakazu
Department of Cardiology, Nagoya University Graduate School of Medicine
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YAMAMOTO Akio
Department of Applied Chemistry, Graduate School of Science and Engineering, Waseda University
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TANIGAWA Shoichiro
Institute of Materials Science, The University of Tsukuba
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Watanabe Yuya
Department Of Oral Pathology Osaka Dental University
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NAKAMURA Yoshio
Department of Chemistry, Faculty of Sciece, Konan University
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NAKATSUKA Shin-ichi
Department of Pathology, Osaka University Graduate School of Medicine
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Isaka Takayuki
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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MATSUZAKI Yuichi
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Sato K
Asahi Glass Co. Ltd. Yokohama Jpn
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WEI Long
Institute of Materials Science, University of Tsukuba
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NITTONO Osamu
Department of Metallurgy and Ceramics Science, Tokyo Institute of Technology
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Masu Kazuya
Department Of Physical Electronics Tokyo Institute Of Technology
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Nittono Osamu
Department Od Metallurgical Engineering Tokyo Institute Of Technology
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Sato K
Faculty Of Applied Biological Science Hiroshima University
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Sato K
National Institute For Fusion Science
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Konagai Makoto
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Wei Long
Institute Of Materials Science University Of Tsukuba
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KITAMOTO Shinji
Department of Physical Electronics, Tokyo Institute of Technology
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KIMURA Ryuhei
Department of Information Science and Electronics, Teikyo University of Science and Technology
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Matsumoto Kazuhiko
Electrotechnical Laboratory (etl)
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Ikeda Toru
Research Group Of Regional Sciences Graduate School Of Letters Hokkaido University
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Kobayashi Masakazu
Departmdepartment Of Cardiology Nagoya University Graduate School Of Medicine
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ENCINAS MARIN
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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NAKADA Nobuyuki
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Yamada T
Ntt Basic Research Laboratories:(present Address) Ntt Opto-electronics Laboratories
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UDA Satoshi
Institute for Materials Research, Tohoku University
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Katoh Toshiaki
Department Of Electronic Engineering Faculty Of Engineering Mie University
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Katoh Toshiaki
Department Of Physical Electronics Tokyo Institute Of Technology
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TAKEMURA Yasushi
Department of Electrical and Computer Engineering, Yokohama National University
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Shimizu Masayuki
Department Of Dermatology Faculty Of Medicine Mie University
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Sato K
National Defense Acad. Yokosuka Jpn
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Sato K
Faculty Of Technology Tokyo Universily Of Agriculture And Technology
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Sano H
Murata Manufacturing Co. Ltd. Kyoto Jpn
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Minagawa Shiroh
Division Of Cardiology Niigata University Graduate School Of Medical And Dental Sciences
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Azuma Toshiaki
Department of Physical Electronics, Tokyo Institute of Tecnology
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Fukuchi Fumihiko
Department of Physical Electronics, Tokyo Institute of Tecnology
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FUJIMOTO Isao
Science and Technical Research Laboratories of NHK
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NISHINE Shiro
Sumitomo Electric Industries, Ltd.
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SHIRAKASHI Junichi
Department of Physical Electronics, Tokyo Institute of Technology
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KUDOU Yoshimitsu
Department of Physical Electronics, Tokyo Institute of Technology
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LIM Koeng
Department of Electrical Engineering, Korea Advanced Institute of Science and Technology
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FUKAMACHI Taichi
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Sawamura Makoto
Department Of Physics Hiroshima University
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Matsuzaki Y
Mie Univ. Tsu Jpn
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TAKEGAMI Tsuyoshi
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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MIYASHITA Toshihiko
Department of Physical Electronics, Tokyo Institute of Technology
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YOSHINO Masahiro
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Sandhu Adarsh
Department Of Electrical And Electronic Engineering Tokai University
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ALONSO Juan
Department of Physical Electronics, Tokyo Institute of Technology
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NAGAMINE Kunihiro
Central Research Laboratory, Mitsui toatsu Chemicals Inc.
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Alonso Juan
Department Of Physical Electronics Tokyo Institute Of Technology:institute De Investigaciones En Mat
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Miyajima Seiichi
Division Of Internal Medicine Niigata Minami Hospital
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Kenne Jean
Department Of Physical Electronics Tokyo Institute Of Technology
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Ando Hideyasu
Department Of Physical Electronics Tokyo Institute Of Technology
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Yamada Tomoyuki
Research Laboratory Oki Electric Industry Co. Ltd.
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Fukamachi Taichi
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Amemiya Yoshihito
Department Of Electrical Engineering Faculty Of Engineering Hokkaido University
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Takegami Tsuyoshi
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Tanigawa Shoichiro
Institute Of Applied Physics University Of Tsukuba
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Matsumoto Kazuhiko
Electrotechnical Laboratory (elt)
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Miyashita Toshihiko
Department Of Physical Electronics Tokyo Institute Of Technology
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Jahn Uwe
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Kudriavtsv Yuriy
Electrical Engineering Department Center For Research And Advanced Studies
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Nakanishi Kazuyuki
Department Of Physical Electronics Tokyo Institute Of Technology
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Isaka Takayuki
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Yabe Chiaki
Department Of Physical Electronics Tokyo Institute Of Technology
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Ito Manabu
Technical Research Institute Toppan Printing Co. Ltd.
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Sato K
Dept. Of Energy Engineering And Science Nagoya University
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MINO Naoki
Department of Physical Electronics, Tokyo Institute of Technology
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KAMBE Mika
Department of Physical Electronics, Tokyo Institute of Technology
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SATO Kazuo
Research Center, Asahi Glass Co., Ltd.
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KOBAYASHI Daisuke
Research Center, Asahi Glass Co., Ltd.
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FUKAWA Makoto
Research Center, Asahi Glass Co., Ltd.
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TANEDA Naoki
Research Center, Asahi Glass Co., Ltd.
著作論文
- Novel In(OH)_3:Zn^ Buffer Layer for Cu(InGa)Se_2 Based Solar Cells
- Effect of ZnTe and CdZnTe Alloys at the Back Contact of 1-μm-Thick CdTe Thin Film Solar Cells
- Phosphorous Doping of Strain-Induced Si_C_y Epitaxial Films Grown by Low-Temperature Chemical Vapor Deposition
- Preferred Orientation Control of Cu(In_Ga_x)Se_2 (x≈0.28) Thin Films and Its Influence on Solar Cell Characteristics
- P-Doping into Strain-Induced Si_C_y Epitaxial Films Grown by Low Temperature Chemical Vapor Deposition
- Epitaxial Growth of γ-In_2Se_3 Films by Molecular Beam Epitaxy
- Epitaxial Growth of Si_C_y Film by Low Temperature Chemical vapor Deposition
- Formation of pn Homojunction in Cu(InGa)Se_2 Thin Film Solar Cells by Zn Doping
- Amorphous-to-Polycrystalline Silicon Transition in Hot Wire Cell Method
- Improvement of the Electrochemical Profiling Technique of Carrier Concentration in Cu(InGa)Se_2 Thin Film Solar Cells
- High-Efficiency Amorphous Silicon Solar Cells with ZnO as Front Contact
- Improvement of Stabilized Efficiency of Amorphous Silicon Solar Cell by SiH_2Cl_2 Addition
- Characterization of Highly Efficient CdTe Thin Film Solar Cells by the Capacitance-Voltage Profiling Technique
- Improvement in Performances of ZnO : B/i-ZnO/Cu(InGa)Se_2 Solar Cells by Surface Treatments for Cu(InGa)Se_2
- Electrical and Structural Characterizations of Cu(InGa)Se_2 Thin Films Using Electrochemical Capacitance-Voltage Method and Focused-Ion Beam Process
- Cu(InGa)Se_2 Thin-film Solar Cells with High Resistivity ZnO Buffer Layers Deposited by Atomic Layer Deposition
- Prospects of Thickness Reduction of the CdTe Layer in Highly Efficient CdTe Solar Cells Towards 1 μm
- Molecular Beam Epitaxy and Characterization of Layered In_2Se_3 Films Grown on Slightly Misoriented (001)GaAs Substrates
- Heteroepitaxy and Multiquantum Well Structure of Layered Compound GaSe/GaS_xSe_ on (001) GaAs Substrate
- Characterization of Highly Efficient CdTe Thin Film Solar Cells by Low-Temperature Photoluminescence
- Characterizaiton of ZnIn_xSe_y Thin Films as a Buffer Layer for High Efficiency Cu(InGa)Se_2 Thin-Film Solar Cells
- Characterization of Tensile Strained Si_1_yCy Alloy Grown by Photo- and Plasma Chemical Vapor Deposition at Very Low Temperature
- Native Defect Control of CdTe Thin Film Solar Cells by Close-Spaced Sublimation
- Photoluminescence Studies and Solar-Cell Application of CuInSe_2 Thin Films Prepared using Selenization Techniques
- Photoluminescence Study of CuInSe_2 Thin Films Prepared by the Selenization Technique
- Study of CuInSe_2 Formation Kinetics in the Selenization Process by Raman Spectroscopy
- Developmemt of High-Efficiency CuIn_xGa_Se_2 Thin-Film Solar Cells by Selenization with Elemental Se Vapor in Vacuum
- Heteroepitaxy of Layered Compound InSe and InSe/GaSe onto GaAs Substrates
- InGaP/GaAs Heterojunction Bipolar Transistors with an Ultra-High Carbon-Doped Base (p=1.5×10^cm^)
- Low Temperature Growth of Heavily Carbon-Doped GaAs by Metalorganic Molecular Beam Epitaxy with Elemental Gallium
- Characterization of Carbon-Doped GaAs Grown by Molecular Beam Epitaxy Using Neopentane as Carbon Source
- Carbon δ-Doping in GaAs by Metal-Organic Molecular Beam Epitaxy
- Structural Aspects of Heavily Carbon-Doped GaAs Grown by Metalorganic Molecular Beam Epitaxy (MOMBE)
- GaAs Pseudo-Heterojunction Bipolar Transistor with a Heavily Carbon-Doped Base
- P-Type Carbon-Doped InGaAs Grown by Metalorganic Molecular Beam Epitaxy
- GaAs PN Diodes with Heavily Carbon-Doped P-Type GaAs Grown by MOMBE
- Theoretical Analysis of Heavy Doping Effects on AlGaAs/GaAs HBT's
- Heavily Carbon-Doped P-Type InGaAs Grown by Metalorganic Molecular Beam Epitaxy
- Preparation of GaAs and Ga_Al_xAs Multi-Layer Structures by Metalorganic Molecular Beam Epitaxy
- Metalorganic Molecular-Beam Epitaxial Growthand Characterization of GaAs Using Trimethyl- and Triethyl-Gallium Sources
- Photoluminescence properties of Cu(InGa)Se2 thin films prepared by mechanochemical process (Special issue: Nano electronic materials)
- Highly Stable ZnO Thin Films by Atomic Layer Deposition
- Textured ZnO Thin Films for Solar Cells Grown by a Two-step Process with the Atomic Layer Deposition Technique
- Growth of Transparent Conductive Oxide ZnO Films by Atomic Layer Deposition
- Polycrystalline Cu(InGa)Se_2 Thin-Film Solar Cells with ZnSe Buffer Layers
- Photoinduced Oxidation of Epitaxial Ga_2Se_3 Grown by Molecular Beam Epitaxy
- Effect of Heavy Doping on Band Gap and Minority Carrier Transport of AlGaAs/GaAs HBT's (SOLID STATE DEVICES AND MATERIALS 1)
- Defect Evaluation of Heavily P-Doped Si Epitaxial Films Grown at Low Temperature
- Control of the Arrangement of the Native Gallium Vacancies in Ga_2Se_3 on (100)GaAs by Molecular Beam Epitaxy
- Formation of ZnGa_2Se_4 Epitaxial Layer during Molecular Beam Epitaxial Growth of Ga_2Se_3 on ZnSe
- Raman Study of Epitaxial Ga_2 Se_3 Films Grown by Molecular Beam Epitaxy
- Optical Anisotropy of Vacancy-Ordered Ga_2Se_3 Grown by Molecular Beam Epitaxy
- Metalorganic Chemical Vapor Deposition of ZnO Using D_2O as Oxidant
- Optimization of ZnO Films for Amorphous Silicon Solar Cells
- Large-Area ZnO Thin Films for Solar Cells Prepared by Photo-Induced Metalorganic Chemical Vapor Deposition
- Mobility Enhancement of Textured ZnO Films by Ultraviolet Light Irradiation
- Low-Temperature Si Epitaxy by Photochemical Vapor Deposition with SiH_2Cl_2
- p-Type a-SiC:H Films Using Triethylboron and Its Application to Solar Cells
- Effects of Deuterium on Low-Temperature Si Epitaxy by Photo-Chemical Vapor Deposition
- Heavily P-Doped (>10^ cm) Silicon Films Grown by Photochemical Vapor Deposition at a Very Low Temperature of 250℃
- Photochemical Vapor Deposition of Si/Si_Ge_x Strained Layer Superlattices at 250℃ : Silicon Heterostructures(Solid State Devices and Materials 1)
- Epitaxial Growth of Silicon by Plasma Chemical Vapor Deposition at a Very Low Temperature of 250℃
- ZnSe:Mn DC-Electroluminesent Cells Using Di-π-Cyclopentadienyl Manganese as a New Manganese Source Fabricated by Plasma-Assisted MOCVD
- Preparation of Nanocrystalline Silicon in Amorphous Silicon Carbide Matrix
- TiO_2-Coated Transparent Conductive Oxide (SnO_2:F) Films Prepared by Atmospheric Pressure Chemical Vapor Deposition with High Durability against Atomic Hydrogen
- Heavily Carbon-Doped P-Type GaAs Grown on GaAs Substrates with Various Orientations by Metalorganic Molecular Beam Epitaxy
- High Quality Amorphous Silicon Films Prepared by Atmospheric-Pressure Photo-CVD : Condensed Matter
- Optically Detected Magnetic Resonance in Fluorinated Amorphous Silicon (a-Si: H, F)
- High Deposition Rate of Polycrystalline Silicon Thin Films Prepared by Hot Wire Cell Method
- High-Efficiency Delta-Doped Amorphous Silicon Solar Cells Prepared by Photochemical Vapor Deposition
- Junction Properties of nip and pin Amorphous Si Solar Cells Prepared by a Glow Discharge in Pure Silane : III-2: AMORPHOUS SOLAR CELLS (1) : Proparation Process
- High Quality Aluminum Oxide Passivation Layer for Crystalline Silicon Solar Cells Deposited by Parallel-Plate Plasma-Enhanced Chemical Vapor Deposition
- Structural Analysis of Side and SiGeC Alloys by Ab Initio Total-Energy Calculations
- Structural Analysis of SiGeC Alloys by ab initio Total-Energy Calculations
- Fabrication of Sub-Micron Gap Structures using Directly-Deposited Amorphous Carbon Wires
- Development of Polycrystalline Culn_xGa_Se_2 Thin-Film Solar Cells with Band Gap of 1.3 to 1.5 eV
- Growth Mechanism during Silicon Epitaxy by Photochemical Vapor Deposition at Low Temperatures
- Characterization of Hydrogen in Epitaxial Silicon Films Grown at Very Low Temperatures
- Effects of Temperature and Spectral Irradiance on Performance of Silicon-Based Thin Film Multijunction Solar Cells
- p-Ga_Al_As/p-Ga_Al_yAs/n-Ga_Al_yAs Solar Cells : II-1: COMPOUND SOLAR CELLS
- Amorphous Silicon Thin Films Prepared by Hot Wire Cell Method and Its Application to Solar Cells
- Analysis of H_2-Dilution Effects on Photochemical Vapor Deposition of Si Thin Films
- Heavily B-Doped Epitaxial Si Films Grown by Photochemical Vapor Deposition at Very Low Temperature (
- Numerical Analysis of a Solar Cell with Tensile-Strained Ge as a Novel Narrow-Band-Gap Absorber
- Improvement of Film Quality in CuInSe2 Thin Films Fabricated by a Non-Vacuum, Nanoparticle-Based Approach
- Room Temperature Operation of Amorphous Carbon-Based Single-Electron Transistors Fabricated by Beam-Induced Deposition Techniques
- Single-Electron Tunneling through Amorphous Carbon Dots Array
- Sub-Micron Tungsten Carbide/Amorphous Carbon Stacked Diode Fabricated by Ion- and Electron-Beam-Induced Deposition Technique
- Fabrication of Sub-Micron Tungsten Carbide (WCx)/Amorphous Carbon (a-C) Stacked Junction By Beam-Induced Reaction Processes
- Anomalous Electrical Characteristics of Epitaxial InN Films Having a High Electron Comcentratiorn at Very Low Temperature
- Application of Carbonaceous Material for Fabrication of Nano-Wires with a Scanning Electron Microscopy
- Effects of Annealing and Atomic Hydrogen Treatment on Aluminum Oxide Passivation Layers for Crystalline Silicon Solar Cells
- Characterization of cuInSe_2 thin Films by Photoluminescence Measurements
- Present Status and Future Prospects of Silicon Thin-Film Solar Cells
- Improvement of Rear Surface Passivation Quality in p-Type Silicon Heterojunction Solar Cells Using Boron-Doped Microcrystalline Silicon Oxide
- Boron-doped Microcrystalline Silicon Oxide Film for Use as Back Surface Field in Cast Polycrystalline Silicon Solar Cells
- Texture Etching of Si with Atomic Hydrogen Generated by Hot Wire Method through SiO2 Masks for Solar Cell Applications
- Growth of Polycrystalline Zn1-XMgXO Thin Films Using EtCp2Mg and MeCp2Mg by Metal Organic Chemical Vapor Deposition
- Characterization of Defects-Location in Hydrogenated Microcrystalline Silicon Thin Films and Its Influence on Solar Cell Performance
- Low-temperature Deposition of Hydrogenated Microcrystalline Silicon Thin Films by Photochemical Vapor Deposition Technique and Their Application to Thin Film Solar Cells
- Effect of the Structural Change of Hydrogenated Microcrystalline Silicon Thin Films Prepared by Hot-Wire Chemical Vapor Deposition
- Characterization of Hydrogen in Epitaxial Si Films Grown at Very Low Temperature
- Characterization of ZnO/CdS/CuInSe_2 Thin-Film Solar Cells by Deep-Level Transient Spectroscopy
- Amorphous-Silicon Solar Cells Prepared by a Combined Photoehemical-Plasma CVD Technique
- Growth of III-VI Compound Semiconductors by Metalorganic Molecular Beam Epitaxy
- Growth of ZnSe-ZnS Strained-Layer Superlattices by Metallorganic Molecular Beam Epitaxy
- Mixed Crystal Tunnel Diode
- Characterization of Copper Indium Diselenide Thin Films by Raman Scattering Spectroscopy for Solar Cell Applications
- Self-Limitting Growth in Atomic Layer Epitaxy of ZnTe
- High-Rate Preparation of Amorphous-Silicon Solar Cells with Monosilane
- Metalorganic Molecular Beam Epitaxial Growth of ZnSe Using Diethylzinc and Diethylselenide
- Piezoresistive Effect of Hydrogenated Microcrystalline Silicon Prepared by Plasma- and Photo-Chemical Vapor Deposition
- Characterization of Undoped, N- and P-Type Hydrogenated Nanocrystalline Silicon Carbide Films Deposited by Hot-Wire Chemical Vapor Deposition at Low Temperatures
- Effect of Hydrogen Dilution on the Metastability of Hydrogenated Amorphous Silicon Oxide Solar Cells
- Fabrication of Microcrystalline Cubic Silicon Carbide/Crystalline Silicon Heterojunction Solar Cell by Hot Wire Chemical Vapor Deposition
- Low-Temperature Deposition of Highly Conductive n-Type Hydrogenated Nanocrystalline Cubic SiC Films for Solar Cell Applications
- Temperature Dependence of Protocrystalline Silicon/Microcrystalline Silicon Double-Junction Solar Cells
- Temperature Dependence of Si-Based Thin-Film Solar Cells Fabricated on Amorphous to Microcrystalline Silicon Transition Phase
- Carbon Diffusion Behavior in a GaAs Tunnel Junction with a Heavily Carbon Doped p^+-Layer by Metalorganic Molecular Beam Epitaxy
- Growth of Strain-Relaxed Si1-yCy Films with Compositionally Graded Buffer Layers by Gas Source Molecular Beam Epitaxy
- Native Defect Control of CdTe Thin Film Solar Cells by Close-Spaced Sublimation
- Improving Mobility of F-Doped SnO Thin Films by Introducing Temperature Gradient during Low-Pressure Chemical Vapor Deposition
- Chemical-Bath-Deposited ZnO and Mg(OH)2 Buffer Layer for Cu(InGa)Se2 Solar Cells
- Preparation of Microcrystalline Germanium Carbon Thin Films by Hot-Wire Chemical Vapor Deposition Using Dimethylgermane
- Numerical Approach to the Investigation of Performance of Silicon Nanowire Solar Cells Embedded in a SiO Matrix (Special Issue : Applied Physics on Materials Research)
- Development of Novel Aluminum-Doped Zinc Oxide Film and Its Application to Solar Cells
- Development of Novel Al-Doped Zinc Oxide Films Fabricated on Etched Glass and Their Application to Solar Cells
- Layer-by-Layer Assembled Transparent Conductive Graphene Films for Silicon Thin-Film Solar Cells
- Quantitative Analysis of Surface Morphology of Boron-Doped Zinc Oxide for Microcrystalline Silicon Solar Cells
- Optical Improvement of ZnO-Coated Glass with New Refractive-Index Matching Layer Inserted at Glass/ZnO Interface (Special Issue : Photovoltaic Science and Engineering)
- Highly Conductive Boron Doped Microcrystalline Si Films Deposited by Hot Wire Cell Method and its Application to Solar Cells
- Photoluminescence from Silicon Quantum Dots in Si Quantum Dots/Amorphous SiC Superlattice
- Numerical Analysis to Improve the Stabilized-Efficiency of Amorphous Silicon Solar Cells with New Device Structure
- Efficiency Improvement of Cu(InGa)Se2 Thin Film Solar Cells with a High Ga Composition Using Rapid Thermal Annealing
- Surface Passivation of Crystalline and Polycrystalline Silicon Using Hydrogenated Amorphous Silicon Oxide Film
- First-Principles Analysis of Indirect-to-Direct Band Gap Transition of Ge under Tensile Strain
- Characterization and Device Application of Tensile-Strained Si1-yCy Layers Grown by Gas-Source Molecular Beam Epitaxy
- 2-Step Growth Method and Microcrystalline Silicon Thin Film Solar Cells Prepared by Hot Wire Cell Method
- Improvement in Aspect Ratio of P-GaAs Oxide Fabricated by Atomic Force Microscope (AFM)-Based Nanolithography Using Pulsed Voltage
- Effect of Plasma Power on Structure of Hydrogenated Nanocrystalline Cubic Silicon Carbide Films Deposited by Very High Frequency Plasma-Enhanced Chemical Vapor Deposition at a Low Substrate Temperature
- Properties of Hydrogenated Microcrystalline Cubic Silicon Carbide Films Deposited by Hot Wire Chemical Vapor Deposition at a Low Substrate Temperature
- Characterization and Comparison of Strained Si1-yCy Metal Oxide Semiconductor Field-Effect Transistor Grown by Gas-Source Molecular Beam Epitaxy and Hot Wire Cell Method
- Preparation of Hydrogenated Amorphous Silicon Carbon Nitride Films by Hot-Wire Chemical Vapor Deposition Using Hexamethyldisilazane for Silicon Solar Cell Applications
- Theoretical Analysis of Amorphous Silicon Alloy Based Triple Junction Solar Cells
- Effects of Hydrogen Dilution Ratio on Properties of Hydrogenated Nanocrystalline Cubic Silicon Carbide Films Deposited by Very High-Frequency Plasma-Enhanced Chemical Vapor Deposition
- Improvement of Electrical Properties of Silicon Quantum Dot Superlattice Solar Cells with Diffusion Barrier Layers
- Hydrogenated Amorphous Silicon Oxide Solar Cells Fabricated near the Phase Transition between Amorphous and Microcrystalline Structures
- Intrinsic Microcrystalline Silicon Thin Films Prepared by Hot-Wire Cell Method and Their Application to Solar Cells
- C Stability in Si1-yCy Epitaxial Films Grown by Low-Temperature Chemical Vapor Deposition
- Substitutional C Incorporation into Si1-yCy Alloys Using Novel Carbon Source, 1,3-Disilabutane
- High-Efficiency Amorphous Silicon Solar Cells with ZnO as Front Contact
- Heteroepitaxy and Multiquantum Well Structure of Layered Compound GaSe/GaSxSe1-x on (001)GaAs Substrate
- High Efficiency Amorphous Silicon Solar Cells with "Delta-Doped" P-Layer
- Numerical Study of Amorphous Silicon Based Solar Cell Performance Toward 15% Conversion Efficiency
- Improvement of Electrical Properties of Silicon Quantum Dot Superlattice Solar Cells with Diffusion Barrier Layers (Special Issue : Solid State Devices and Materials)
- Growth and Characterization of Highly Tensile-Strained Ge on InxGa1-xAs Virtual Substrate by Solid Source Molecular Beam Epitaxy
- Preparation of Nanocrystalline Silicon in Amorphous Silicon Carbide Matrix
- Optimum Cell Design for High-Performance A-Si:H Solar Cells Prepared by Photo-CVD
- Improvement of photovoltaic characteristics of B-doped Czochralski-Silicon by Ge codoping
- Improvement of photovoltaic characteristics of B-doped Czochralski-Silicon by Ge codoping
- Excimer-Laser-Induced Chemical Vapor Deposition of Hydrogenated Amorphous Silicon
- Improvement of photovoltaic characteristics of B-doped Czochralski-Silicon by Ge codoping