Temperature Dependence of Si-Based Thin-Film Solar Cells Fabricated on Amorphous to Microcrystalline Silicon Transition Phase
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概要
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The temperature dependence of silicon (Si)-based thin-film single-junction solar cells, whose intrinsic absorbers were fabricated on the transition phase between hydrogenated amorphous silicon (a-Si:H) to hydrogenated microcrystalline silicon (μc-Si:H), was investigated. By varying the hydrogen dilution ratio, wide-band-gap protocrystalline silicon (pc-Si:H) and μc-Si:H absorber layers were obtained. Photo-current density–voltage (Photo-$J$–$V$) characteristics were measured under AM1.5 illumination at ambient temperatures in the range of 25–75 °C. We found that the solar cells with pc-Si:H, which exists just below the a-Si:H to μc-Si:H transition boundary, showed the lowest temperature coefficient (TC) for conversion efficiency ($\eta$) and open-circuit voltage ($V_{\text{oc}}$), while the solar cells fabricated at the onset of the a-Si:H to μc-Si:H phase transition exhibited a relatively high TC for $\eta$ and $V_{\text{oc}}$. Experimental results indicated that pc-Si:H is a promising material for the absorber layer of the single junction or the top cell of tandem solar cells that operate in high temperature regions.
- 2007-11-15
著者
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Myong Seung
Department Of Electrical Engineering Korea Advanced Institute Of Science And Technology
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Yunaz Ihsanul
Department Of Physical Electronics Tokyo Institute Of Technology
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Konagai Makoto
Department Of Electrical & Electronic Engineering Tokyo Institute Of Technology
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Yamada Akira
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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Sriprapha Kobsak
Department Of Physical Electronics Tokyo Institute Of Technology
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Konagai Makoto
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9, O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Yunaz Ihsanul
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9, O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Myong Seung
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9, O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Yamada Akira
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1-S9-9, O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Yamada Akira
Quantum Nanoelectorics Research Center, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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